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BAS40LT3G PDF预览

BAS40LT3G

更新时间: 2024-10-29 12:55:51
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管光电二极管
页数 文件大小 规格书
3页 94K
描述
Schottky Barrier Diodes

BAS40LT3G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318 -08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:6 weeks风险等级:5.49
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.38 VJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.6 A
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.12 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.225 W
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAS40LT3G 数据手册

 浏览型号BAS40LT3G的Datasheet PDF文件第2页浏览型号BAS40LT3G的Datasheet PDF文件第3页 
BAS40L, SBAS40L  
Schottky Barrier Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
http://onsemi.com  
Features  
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AECQ101 Qualified and  
PPAP Capable  
40 VOLTS  
SCHOTTKY BARRIER DIODES  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant*  
MAXIMUM RATINGS  
SOT23 (TO236)  
CASE 318  
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
V
R
40  
V
STYLE 8  
Forward Power Dissipation  
P
F
@ T = 25°C  
225  
1.8  
mW  
mW/°C  
A
3
1
Derate above 25°C  
CATHODE  
ANODE  
Operating Junction and Storage  
Temperature Range  
T
T
55 to +150  
°C  
J, stg  
MARKING DIAGRAM  
Forward Continuous Current  
I
120  
mA  
mA  
F
Forward Surge Current  
t v 1 s  
t v 10 ms  
I
FSM  
200  
600  
B1 M G  
G
Thermal Resistance (Note 1)  
JunctiontoAmbient (Note 2)  
R
508  
311  
°C/W  
q
JA  
B1 = Specific Device Code  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR4 @ minimum pad.  
M
= Date Code*  
G
= PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may vary  
depending upon manufacturing location.  
2. FR4 @ 1.0 x 1.0 in pad.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BAS40LT1G,  
SBAS40LT1G  
SOT23  
(PbFree)  
3,000 /  
Tape & Reel  
BAS40LT3G,  
SBAS40LT3G  
SOT23  
(PbFree)  
10,000 /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
November, 2012 Rev. 10  
BAS40LT1/D  
 

BAS40LT3G 替代型号

型号 品牌 替代类型 描述 数据表
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