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BAS40RFG PDF预览

BAS40RFG

更新时间: 2024-11-24 01:09:23
品牌 Logo 应用领域
TSC 光电二极管
页数 文件大小 规格书
5页 244K
描述
Low VF SMD Schottky Barrier Diode

BAS40RFG 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:GREEN, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.52
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
最大重复峰值反向电压:40 V最大反向恢复时间:0.005 µs
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

BAS40RFG 数据手册

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BAS40 / -04 / -05 / -06  
Taiwan Semiconductor  
Small Signal Product  
Low VF SMD Schottky Barrier Diode  
FEATURES  
- Metal-on-silicon schottky barrier  
- Surface device type mounting  
- Moisture sensitivity level 1  
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
- Packing code with suffix "G" means  
green compound (halogen-free)  
MECHANICAL DATA  
SOT-23  
- Case: SOT- 23, molded plastic  
- Terminal: Matte tin plated, lead free,  
solderable per MIL-STD-202, Method 208 guaranteed  
- High temperature soldering guaranteed: 260oC/10s  
- Weight: 0.008g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25unless otherwise noted)  
PARAMETER  
VALUE  
SYMBOL  
PD  
UNIT  
mW  
V
Power Dissipation  
200  
Repetitive Peak Reverse Voltage  
Reverse Voltage  
VRRM  
VR  
40  
40  
V
Repetitive Peak Forward Current  
Mean Forward Current  
IFRM  
200  
mA  
mA  
A
oC/W  
oC  
IO  
200  
Non-Repetitive Peak Forward Surge Current  
Thermal Resistance (Junction to Ambient)  
Junction and Storage Temperature Range  
(Note 1)  
(Note 2)  
IFSM  
0.6  
RθJA  
357  
TJ , TSTG  
-65 to +125  
PARAMETER  
MIN  
40  
MAX  
-
SYMBOL  
UNIT  
IR=10μA  
V(BR)  
Reverse Breakdown Voltage  
V
IF=1mA  
IF=10mA  
-
0.38  
0.50  
1.00  
0.2  
VF  
Forward Voltage  
-
V
IF=40mA  
-
VR=30V  
Reverse Leakage Current  
Junction Capacitance  
IR  
CJ  
trr  
-
μA  
pF  
ns  
VR=1V, f=1.0MHz  
-
5.0  
IF=IR=10mA, RL=100, IRR=1mA  
-
5.0  
Reverse Recovery Time  
Notes : 1. Test Condition : 8.3ms single half sine-wave superimposed on rated load  
Notes : 2. Valid provided that electrodes are kept at ambient temperature  
Version: F14  
Document Number: DS_S1412006  

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