BAS40Q-13-F

更新时间： 2024-11-24 13:45:39

品牌	Logo	应用领域
美台 - DIODES		整流二极管
页数	文件大小	规格书
2页	157K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BAS40Q-13-F 数据手册

BAS40/ -04/ -05/ -06

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Low Forward Voltage Drop

Fast Switching

PN Junction Guard Ring for Transient and

ESD Protection

SOT-23

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.85

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.80

8°

Mechanical Data

TOP VIEW

Case: SOT-23, Molded Plastic

Case material - UL Flammability Rating

Classification 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: See Diagram Below

Weight: 0.008 grams (approx.)

Marking Code: See Diagrams Below & Page 2

Ordering Information: See Page 2

All Dimensions in mm

BAS40 Marking: K43

BAS40-04 Marking: K44

BAS40-05 Marking: K45

BAS40-06 Marking: K46

Maximum Ratings ^{@ T}_A= 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

I_FM

P_d

Forward Continuous Current (Note 1)

Power Dissipation (Note 1)

200

350

°C/W

°C

I_FSM

Forward Surge Current (Note 1)

@ t < 1.0s

600

qJA

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating Temperature Range

357

T_j

-55 to +125

-65 to +150

T_STG

°C

Storage Temperature Range

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol Min

Typ

Max

Unit

Test Condition

V_(BR)R

I_R= 10mA

Reverse Breakdown Voltage (Note 2)

—

t_p< 300ms, I_F= 1.0mA

t_p< 300ms, I_F= 40mA

380

1000

V_F

—

Forward Voltage (Note 2)

—

I_R

Reverse Leakage Current (Note 2)

Total Capacitance

t_p< 300ms, V_R= 30V

—

200

5.0

V_R= 0V, f =1.0MHz

C_T

—

4.0

I_F= I_R= 10mA to I_R= 1.0mA,

R_L= 100W

t_rr

Reverse Recovery Time

—

5.0

Note:

1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website

at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

DS11006 Rev. 12 - 2

1 of 2

BAS40 /-04 /-05 /-06

中文翻译

下载PDF

与BAS40Q-13-F相关器件

型号	品牌	获取价格	描述	数据表
BAS40RDW	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY DIODE ARRAYS
BAS40RF	TSC	获取价格	Low VF SMD Schottky Barrier Diode
BAS40RFG	TSC	获取价格	Low VF SMD Schottky Barrier Diode
BAS40S	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY DIODES
BAS40S	WTE	获取价格	SURFACE MOUNT SCHOTTKY DIODES
BAS40S	RECTRON	获取价格	SOT-23 SCHOTTKY DIODE
BAS40S	WON-TOP	获取价格	SMD
BAS40S-AU	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY DIODES Fast switching speed
BAS40SDW	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY DIODE ARRAYS
BAS40SDW	SWST	获取价格	肖特基二极管