BAS40-04T-TP

更新时间： 2024-10-31 13:05:51

品牌	Logo	应用领域
美微科 - MCC		肖特基二极管光电二极管 IOT
页数	文件大小	规格书
4页	263K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

BAS40-04T-TP 数据手册

M C C

BAS40

THRU

BAS70

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

Surface Mount

Schottky Barrier Diode

200 mWatt

ꢀ

SOT-23 Package For surface mount application

Protects from line to V_CCand line to ground

Low forward voltage and reverse recovery characteristics

Bidirectional-low-forward available with “ -04” suffix (Figure 2)

Tape & Reel EIA Standard 481.

Mechanical Data

SOT-23

ꢀ

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

ꢀ

Mounting Position: Any

Weight: .008 grams (approx.)

MAXIMUM RATINGS

Operating Temperature: -55^oC to +125^oC

Storage Temperature: -55^oC to +150^oC

Power Dissipation: 200 mWatts @ T_amb=25^oC

ꢁ

_a=25 C

BAS40 I_FM=200mA

Forward Continuous Current:

Surge Forward Current: 600mA @ t_p<1s, T_amb=25^oC

=70mA

_a=25 C

BAS70

DIMENSIONS

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

DESCRIPTION

Various configurations of Schottky barrier’ s diodes in SOT-23

package are provided for general-purpose use in high-speed

switching ,mixers and detector applications. They may also be

used for signal integrity and counteract the transmission-line

effects with (PC) board trances by clamping over/and undershoot

from signal reflections with the schottky-low-threshold voltages.

This type of termination also does not depend on matching

the transmission line characteristic impedance, making it

particularly useful where line impendance is unknown or a

variable. This methode of termination can control distortions of

clock, data, address, and control lines as well as provides a

stabilizing effect on signal jitter. It can also significantly reduce

power consumption compared to standard resistor-based

termination methods.

.085

.37

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

inches

2.000

.037

.950

.037

.950

www.mccsemi.com

Revision: A

2011/01/01

1 of 4

12 3 4

中文翻译

下载PDF

BAS40-04T-TP 替代型号

型号	品牌	替代类型	描述	数据表
BAS40-04-TP	MCC	功能相似	Surface Mount Schottky Barrier Diode 200 mWatt
BAS40-04T-7-F	DIODES	功能相似	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40-04T-7	DIODES	功能相似	SURFACE MOUNT SCHOTTKY BARRIER DIODE

与BAS40-04T-TP相关器件

型号	品牌	获取价格	描述	数据表
BAS40-04V	RECTRON	获取价格	Reverse Voltage Vr : 40 V;Forward Current Io : 0.2 A;Forward Voltage Vf : 0.38 V;Reverse C
BAS40-04-V	VISHAY	获取价格	Small Signal Schottky Diodes, Single & Dual
BAS40-04-V-GS08	VISHAY	获取价格	Small Signal Schottky Diodes, Single & Dual
BAS40-04-V-GS18	VISHAY	获取价格	Small Signal Schottky Diodes, Single & Dual
BAS40-04W	INFINEON	获取价格	Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection
BAS40-04W	NEXPERIA	获取价格	General-purpose dual Schottky diodeProduction
BAS40-04W	SEMTECH	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40-04W	WTE	获取价格	General-purpose Schottky diodes
BAS40-04W	NXP	获取价格	Schottky barrier double diodes
BAS40-04W	SWST	获取价格	肖特基二极管

与BAS40-04T-TP相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

20
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

21
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

53

产品中心

服务支持

精选活动

关于我们

帮助中心

BAS40-04T-TP

BAS40-04T-TP 数据手册

BAS40-04T-TP 替代型号

与BAS40-04T-TP相关器件

与BAS40-04T-TP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BAS40-04T-TP

BAS40-04T-TP 数据手册

BAS40-04T-TP 替代型号

与BAS40-04T-TP相关器件

与BAS40-04T-TP相关文章

您还可以找

您在本页遇到什么问题？