BAS40-05

更新时间： 2024-11-01 12:21:19

品牌	Logo	应用领域
鲁光 - LGE		小信号肖特基二极管光电二极管
页数	文件大小	规格书
2页	143K
描述
Surface Mount Schottky Barrier Diode

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中文翻译

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技术参数
数据手册

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BAS40-05 技术参数

Case Style：	SOT-23	IF(A)：	200
VRRM (V)：	40	IFSM (A)：	0.6
VF (V)：	1.0	@ IF (A)：	40
Maximum reverse current：	1.0	TRR(nS)：
class：	Diodes

BAS40-05 数据手册

BAS40 / -04 / -05 / -06

Surface Mount Schottky Barrier Diode

SOT-23

Features

Low turn-on voltage

Fast switching

PN junction guard Ring for transient

Mechanical Data

Case: SOT-23, Molded plastic

Marking & Polarity: See diagram below

Weight: 0.008 grams (approx.)

Dimensions in inches and (millimeters)

Maximum Ratings T_A=25℃ unless otherwise specified

Type Number

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

VRRM

VRWM

BAS40

Units

Forward Continuous Current (Note 1)

IFM

IFSM

200

600

200

357

Non-Repetitive Peak Forward Surge Current

@ t ≦1.0s

Power Dissipation (Note 1)

^OC/W

Thermal Resistance Junction to Ambient Air

(Note 1)

Operating Junction Temperature Range

RθJA

T_J

T_STG

-55 to + 125

-65 to + 150

^OC

Storage Temperature Range

Electrical Characteristics

Type Number

Symbol

V(BR)

Min

Typ

Max

Units

Reverse Breakdown Voltage

IR=10uA

Reverse Leakage Current tp<300us, VR=30V

200

Forward Voltage Drop

tp=300us, IF=1.0mA

tp<300us, IF=40mA

380

1000

Junction Capacitance VR=0, f=1.0MHz

4.0

5.0

trr

Reverse Recovery Time (Note 2)

Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.

2. Reverse Recovery Test Conditions: I_F=I_R=10mA, Irr=1.0mA, RL=100Ω.

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mail:lge@luguang.cn

中文翻译

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BAS40-05/T3	NXP	获取价格	0.12A, 40V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3
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