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BAS40-05-E3-08 PDF预览

BAS40-05-E3-08

更新时间: 2024-11-09 15:30:39
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
3页 85K
描述
Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3

BAS40-05-E3-08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:12 weeks风险等级:0.82
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.38 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.6 A
元件数量:2端子数量:3
最高工作温度:125 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.2 W最大重复峰值反向电压:40 V
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

BAS40-05-E3-08 数据手册

 浏览型号BAS40-05-E3-08的Datasheet PDF文件第2页浏览型号BAS40-05-E3-08的Datasheet PDF文件第3页 
BAS40-00 to BAS40-06  
www.vishay.com  
Vishay Semiconductors  
Small Signal Schottky Diodes, Single and Dual  
FEATURES  
• These diodes feature very low turn-on voltage  
and fast switching  
• These devices are protected by a PN junction  
guardring against excessive voltage, such as  
electrostatic discharges  
• AEC-Q101 qualified  
• Base P/N-E3 - RoHS-compliant, commercial grade  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
BAS40-00  
BAS40-04  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
3
3
MECHANICAL DATA  
Case: SOT-23  
Top View  
Top View  
1
2
1
2
Weight: approx. 8.8 mg  
BAS40-05  
BAS40-06  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
3
3
1
2
1
2
PARTS TABLE  
PART  
ORDERING CODE  
INTERNAL CONSTRUCTION  
TYPE MARKING  
REMARKS  
BAS40-00-E3-08 or BAS40-00-E3-18  
BAS40-00-HE3-08 or BAS40-00-HE3-18  
BAS40-04-E3-08 or BAS40-04-E3-18  
BAS40-04-HE3-08 or BAS40-04-HE3-18  
BAS40-05-E3-08 or BAS40-05-E3-18  
BAS40-05-HE3-08 or BAS40-05-HE3-18  
BAS40-06-E3-08 or BAS40-06-E3-18  
BAS40-06-HE3-08 or BAS40-06-HE3-18  
BAS40-00  
BAS40-04  
BAS40-05  
BAS40-06  
Single diode  
43  
Dual diodes serial  
44  
45  
46  
Tape and reel  
Dual diodes common cathode  
Dual diodes common anode  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Repetitive peak reverse voltage  
Forward continuous current (1)  
Surge forward current (1)  
Power dissipation (1)  
VRRM = VRWM = VR  
40  
V
IF  
200  
600  
200  
mA  
mA  
mW  
tp < 1 s  
IFSM  
Ptot  
Note  
(1)  
Device on fiberglass substrate, see layout on next page.  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Thermal resistance junction to ambient air (1)  
Junction temperature  
RthJA  
Tj  
500  
K/W  
°C  
125  
Storage temperature range  
Tstg  
Top  
- 65 to + 150  
- 55 to + 125  
°C  
Operating temperature range  
°C  
Note  
(1)  
Device on fiberglass substrate, see layout on next page.  
Rev. 2.0, 25-Feb-13  
Document Number: 85701  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

BAS40-05-E3-08 替代型号

型号 品牌 替代类型 描述 数据表
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