Datasheet > BAS40-05-200MA-SOT-23

BAS40-05-200MA-SOT-23

更新时间： 2024-11-25 01:10:11

品牌	Logo	应用领域
南晶电子 - DGNJDZ		/
页数	文件大小	规格书
2页	338K
描述
SOT-23 Plastic-Encapsulate Diodes

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数据手册

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BAS40-05-200MA-SOT-23 数据手册

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DONGGUAN NANJING ELECTRONICS LTD.,

SOT-23 Plastic-Encapsulate Diodes

SOT-23

BAS40/-04/-05/-06

SCHOTTKY BARRIER DIODE

FEATURES

Low Forward Voltage

Fast Switching

BAS40 MARKING: 43•

BAS40-06 MARKING: 46

BAS40-05 MARKING：45

BAS40-04 MARKING：44

Maximum Ratings @Ta=25℃

Parameter

Symbol

Limit

Unit

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

V_RRM

V_RWM

V_R

200

Forward continuous current

I_FM

200

Power dissipation

P_D

R_θJA

T_J

℃/W

℃

Thermal resistance junction to ambient

Junction temperature

500

125

Storage temperature range

T_STG

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test conditions

I_R= 10μA

Min

Max

Unit

Reverse breakdown voltage

Reverse voltage leakage current

V_R=30V

200

I_F=1mA

380

Forward voltage

V_F

C_D

I_F=40mA

1000

Diode capacitance

Reverse recovery time

V_R=0,f=1MHz

I_rr=1mA, I_R=I_F=10mA

t _{r r}

R_L=100Ω

1/2

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BAS40-05212	NXP	获取价格	DIODE 0.12 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
BAS40-05-7	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40-05-7-F	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40-05-7-F	WTE	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40-05B5000	ROCHESTER	获取价格	0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3-PIN
BAS40-05B5003	INFINEON	获取价格	Rectifier Diode, Schottky, 2 Element, 0.12A, 40V V(RRM), Silicon, SOT-23, 3-PIN
BAS40-05E	SWST	获取价格	肖特基二极管
BAS40-05E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, PLASTIC PACKAGE-3
BAS40-05-E3-08	VISHAY	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
BAS40-05-E3-18	VISHAY	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3