Datasheet > BAS40-05HYFH

BAS40-05HYFH

更新时间： 2024-11-07 11:08:15

品牌	Logo	应用领域
罗姆 - ROHM		二极管
页数	文件大小	规格书
7页	1793K
描述
BAS40-05HYFH适用于小电流整流用途，是低VF的肖特基势垒二极管。采用非常普遍的SOT-23封装，容易进行设计。是符合AEC-Q101标准的高可靠性产品。

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中文翻译

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数据手册

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BAS40-05HYFH 数据手册

BAS40-05HYFH

Schottky Barrier Diode

Data sheet

●Outline

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120

600

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FSM

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●Features

●Inner Circuit

High reliability

Small mold type

Low V

●Application

●Packaging Specifications

Packing

Small current rectification

Embossed Tape

Reel Size(mm)

Taping Width(mm)

Quantity(pcs)

180

3000

T116

●Structure

Epitaxial planar

Taping Code

Marking

(T = 25ºC unless otherwise stated)

●Absolute Maximum Ratings

Parameter

Repetitive peak reverse voltage

Reverse voltage

Forward current

Repetitive peak forward current

Symbol

Conditions

Duty≦0.5

Reverse direct voltage

Direct current、per diode

t≦1s、Duty≦0.5、per diode

Square waveform、tp＜10ms、

Limits

Unit

120

FRM

Peak forward surge current

600

FSM

Non-repetitive、one cycle、per diode、T =25℃

stg

Junction temperature

Storage temperature

150

-55 ～ 150

℃

(T = 25ºC unless otherwise stated)

●Characteristics

Value per diode

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

I =1mA

0.38

0.50

1.00

μA

Forward voltage

Reverse current

I =10mA

I =40mA

V =30V

V =40V

※Caution：static electricity

Attention

www.rohm.com

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1/4

2020/05/25_Rev.001

12 3 4 5 6 7

中文翻译

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