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BAS40-04-V-GS08 PDF预览

BAS40-04-V-GS08

更新时间: 2024-09-10 06:41:27
品牌 Logo 应用领域
威世 - VISHAY 小信号肖特基二极管
页数 文件大小 规格书
5页 156K
描述
Small Signal Schottky Diodes, Single & Dual

BAS40-04-V-GS08 数据手册

 浏览型号BAS40-04-V-GS08的Datasheet PDF文件第2页浏览型号BAS40-04-V-GS08的Datasheet PDF文件第3页浏览型号BAS40-04-V-GS08的Datasheet PDF文件第4页浏览型号BAS40-04-V-GS08的Datasheet PDF文件第5页 
BAS40-00-V to BAS40-06-V  
Vishay Semiconductors  
Small Signal Schottky Diodes, Single & Dual  
Features  
• These diodes feature very low turn-on  
voltage and fast switching  
• These devices are protected by a PN  
junction guard ring against excessive volt-  
age, such as electrostatic discharges  
e3  
BAS40-00-V  
BAS40-04-V  
3
3
Top View  
Top View  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
1
2
1
2
BAS40-05-V  
BAS40-06-V  
3
3
1
2
1
2
18435  
Mechanical Data  
Case: SOT23, Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Type Marking  
Remarks  
BAS40-00-V  
BAS40-04-V  
BAS40-05-V  
BAS40-06-V  
BAS40-00-V-GS18 or BAS40-00-V-GS08  
BAS40-04-V-GS18 or BAS40-04-V-GS08  
BAS40-05-V-GS18 or BAS40-05-V-GS08  
BAS40-06-V-GS18 or BAS40-06-V-GS08  
43  
44  
45  
46  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Repetitive peak reverse voltage  
VRRM = VRWM = VR  
40  
V
2001)  
6001)  
2001)  
Forward continuous current  
IF  
mA  
mA  
mW  
Surge forward current  
Power dissipation1)  
tp < 1 s  
IFSM  
Ptot  
1) Device on fiberglass substrate, see layout on next page.  
Document Number 85701  
Rev. 1.7, 27-Sep-06  
www.vishay.com  
1

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