Datasheet > BAS40-05

BAS40-05

更新时间： 2024-09-14 06:41:27

品牌	Logo	应用领域
TSC		二极管光电二极管
页数	文件大小	规格书
2页	86K
描述
200mW, Low VF, SMD Schottky Barrier Diode

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数据手册

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BAS40-05 数据手册

BAS40 / -04 / -05 / -06

200mW, Low V_F,SMD Schottky Barrier Diode

Small Signal Diode

Features

Metal-on-silicon Shcottky Barrier

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Unit (inch)

Min Max

Dimensions

Min

2.80

1.20

0.30

1.80

2.25

0.90

Max

Mechanical Data

Case : Flat lead SOT 23 small outline plastic package

3.00 0.110 0.118

1.40 0.047 0.055

0.50 0.012 0.020

2.00 0.071 0.079

2.55 0.089 0.100

1.20 0.035 0.043

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Weight : 0.008gram (approximately)

0.550 REF

0.022 REF

BAS40

BAS40-04

BAS40-05

BAS40-06

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

Value

Units

Power Dissipation

200

Repetitive Peak Reverse Voltage

Reverse Voltage

V^RRM

Repetitive Peak Forward Current

Mean Forward Current

I^FRM

200

I^O

200

Non-Repetitive Peak Forward Surge Current (Note 1)

Thermal Resistance (Junction to Ambient) (Note 2)

Junction and Storage Temperature Range

IFSM

0.6

RθJA

TJ, TSTG

357

°C/W

°C

-65 to + 125

Electrical Characteristics

Type Number

Symbol

Min

Max

Units

Reverse Breakdown Voltage

I_R=

V^(BR)

10μA

I_F=

0.38

0.50

1.00

0.2

1mA

Forward Voltage

I_F=

V^F

10mA

40mA

30V

I_F=

V_R=

V_R=1V,

μA

Reverse Leakage Current

Junction Capacitance

f=1.0MHz

Trr

Reverse Recovery Time I_F=I_R=10mA, R_L=100Ω, I_RR=1mA

5.0

Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)

Notes:2. Valid provided that electrodes are kept at ambient temperature

Version : C09

中文翻译

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BAS40-05,215	NXP	获取价格	BAS40 series; 1PSxxSB4x series - General-purpose Schottky diodes TO-236 3-Pin
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BAS40-05/DG/B2,215	ETC	获取价格	DIODE ARRAY SCHOTTKY 40V TO236AB
BAS40-05/DG/B2,235	ETC	获取价格	DIODE ARRAY SCHOTTKY 40V TO236AB
BAS40-05/E8	VISHAY	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, TO-236AB
BAS40-05/E9	VISHAY	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, TO-236AB
BAS40-05/T3	NXP	获取价格	0.12A, 40V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3
BAS40-05/T4	NXP	获取价格	0.12A, 40V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3