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BAS170WS

更新时间: 2024-11-24 06:41:27
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科信 - KEXIN 肖特基二极管
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描述
Schottky Diodes

BAS170WS 数据手册

  
SMD Type  
Diodes  
Schottky Diodes  
BAS170WS  
SOD-323  
Unit: mm  
+0.1  
1.7  
-0.1  
+0.05  
0.85  
-0.05  
Features  
Schottky diode for high-speed switching  
Circuit protection  
+0.1  
2.6  
-0.1  
1.0max  
0.475  
0.375  
Voltage clamping  
High-level detecting and mixing  
Absolute Maximum Ratings Ta = 25  
PARAMATER  
Repetitive peak reverse voltage  
Forward continuous current  
Surge forward current  
SYMBOL  
VRM  
IF  
TEST CONDITION  
VALUE  
70  
UNIT  
V
70  
mA  
mA  
mW  
/W  
Tamb = 25  
tp < 1 s, Tamb = 25  
Tamb = 25  
IFSM  
Ptot  
600  
200  
650  
150  
Power Dissipation (1)  
Thermal resistance junction to ambient air(1)  
RèJA  
Tj  
Junction temperature  
Operating temperature range  
Storage temperature range  
Ramb  
Ts  
-55 to+125  
-55 to+125  
1.valid provided that electrodes are kept at ambient temperature  
Electrical Characteristics Ta = 25  
PARAMATER  
SYMBOL  
V(BR)R  
TEST CONDITION  
IR = 10 A(Pulse)  
VR =50 V  
MIN  
70  
TYP  
MAX  
UNIT  
V
Reverse breakdown voltage  
0.1  
A
Leakage current  
Forward voltage  
IR  
VR =70 V  
10  
410  
750  
1000  
2
A
IF = 200 mA  
375  
705  
880  
1.5  
100  
34  
V
VF  
I < tief < F = 10 mA  
VF = 15 mA  
V
Forward voltage (1)  
Capacitance  
VF  
Ctot  
t
mV  
pF  
ps  
VR =0 V, f =1 MHz  
IF = 25 mA;  
Charge carrier lifetime  
Differential forward resistance  
Note:  
RF  
IE = 5 mA; f = 10 kHz  
1.Pulse test: tp  
300  
s
Marking  
Marking  
73  
1
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