Datasheet > BAS170WS_15

BAS170WS_15

更新时间： 2024-11-21 01:26:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	72K
描述
Small Signal Schottky Diode

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BAS170WS_15 数据手册

BAS170WS

Vishay Semiconductors

www.vishay.com

Small Signal Schottky Diode

FEATURES

• Schottky diode for high-speed switching

• Circuit protection

• Voltage clamping

• High-level detecting and mixing

• AEC-Q101 qualified

MECHANICAL DATA

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

Case: SOD-323

Weight: approx. 4.3 mg

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

PARTS TABLE

INTERNAL

CONSTRUCTION

PART

ORDERING CODE

TYPE MARKING

REMARKS

BAS170WS-E3-08 or BAS170WS-E3-18

BAS170WS-HE3-08 or BAS170WS-HE3-18

BAS170WS

Single diode

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

V_RRM

I_F

VALUE

UNIT

Repetitive peak reverse voltage

Forward continuous current

Surge forward current

Power dissipation ⁽¹⁾

t_p< 1 s

I_FSM

600

200

P_tot

Note

(1)

Valid provided that electrodes are kept at ambient temperature

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

Thermal resistance junction to ambient air ⁽¹⁾

TEST CONDITION

SYMBOL

R_thJA

T_j

VALUE

650

UNIT

K/W

°C

Junction temperature

125

Operating temperature range

Storage temperature range

T_op

- 55 to + 125

- 65 to + 150

°C

T_stg

°C

Note

(1)

Valid provided that electrodes are kept at ambient temperature

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Reverse breakdown voltage

_R= 10 μA (pulsed)

V_(BR)

I_R

_R= 50 V

_R= 70 V

0.1

μA

Leakage current

I_R

I_F= 1 mA

I_F= 10 mA

V_F

C_D

r_f

375

705

880

1.5

410

750

1000

Forward voltage

Forward voltage ⁽¹⁾

I_F= 15 mA

Diode capacitance

_R= 0 V, f = 1 MHz

Differential forward resistance

I_F= 5 mA, f = 10 kHz



Note

(1)

Pulse test; t_p 300 μs

Rev. 1.9, 25-Feb-13

Document Number: 85653

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与BAS170WS_15相关器件

型号	品牌	获取价格	描述	数据表
BAS170WS-E3-08	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 0.07A, 70V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
BAS170WS-E3-18	VISHAY	获取价格	DIODE SCHOTTKY 70V 70MA SOD323
BAS170WS-G	VISHAY	获取价格	Small Signal Schottky Diode
BAS170WS-G3-08	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 0.07A, 70V V(RRM), Silicon, GREEN PACKAGE-2
BAS170WS-G3-18	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 0.07A, 70V V(RRM), Silicon, GREEN PACKAGE-2
BAS170WS-GS08	VISHAY	获取价格	Schottky Diodes
BAS170WS-GS18	VISHAY	获取价格	Schottky Diodes
BAS170WS-HE3-08	VISHAY	获取价格	DIODE SCHOTTKY 70V 70MA SOD323
BAS170WS-HE3-18	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 0.07A, 70V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
BAS170WS-V	VISHAY	获取价格	Small Signal Schottky Diode

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