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BAS170WS-E3-18 PDF预览

BAS170WS-E3-18

更新时间: 2024-01-30 14:36:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
3页 69K
描述
DIODE SCHOTTKY 70V 70MA SOD323

BAS170WS-E3-18 数据手册

 浏览型号BAS170WS-E3-18的Datasheet PDF文件第2页浏览型号BAS170WS-E3-18的Datasheet PDF文件第3页 
BAS170WS  
Vishay Semiconductors  
www.vishay.com  
Small Signal Schottky Diode  
FEATURES  
• Schottky diode for high-speed switching  
• Circuit protection  
• Voltage clamping  
• High-level detecting and mixing  
• AEC-Q101 qualified available  
DESIGN SUPPORT TOOLS click logo to get started  
• Base P/N-E3 - RoHS-compliant, commercial grade  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
Models  
Available  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOD-323  
Weight: approx. 4.3 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
CIRCUIT  
CONFIGURATION  
PART  
ORDERING CODE  
TYPE MARKING  
REMARKS  
BAS170WS-E3-08 or BAS170WS-E3-18  
BAS170WS-HE3-08 or BAS170WS-HE3-18  
BAS170WS  
Single  
73  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VRRM  
IF  
IFSM  
Ptot  
VALUE  
70  
70  
600  
200  
UNIT  
V
mA  
mA  
mW  
Repetitive peak reverse voltage  
Forward continuous current  
Surge forward current  
Power dissipation (1)  
tp < 1 s  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
Junction temperature  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
650  
125  
UNIT  
K/W  
°C  
Operating temperature range  
Storage temperature range  
Top  
Tstg  
-55 to +125  
-65 to +150  
°C  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Reverse breakdown voltage  
TEST CONDITION  
IR = 10 μA (pulsed)  
SYMBOL  
V(BR)  
IR  
MIN.  
70  
TYP.  
MAX.  
UNIT  
V
VR = 50 V  
0.1  
10  
410  
750  
1000  
2
μA  
μA  
mV  
mV  
mV  
pF  
Leakage current  
VR = 70 V  
IF = 1 mA  
IF = 10 mA  
IR  
VF  
VF  
VF  
CD  
rf  
375  
705  
880  
1.5  
34  
Forward voltage  
Forward voltage (1)  
Diode capacitance  
Differential forward resistance  
IF = 15 mA  
VR = 0 V, f = 1 MHz  
IF = 5 mA, f = 10 kHz  
Ω
Note  
(1)  
Pulse test; tp 300 μs  
Rev. 2.2, 01-Jun-17  
Document Number: 85653  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

BAS170WS-E3-18 替代型号

型号 品牌 替代类型 描述 数据表
BAS170WS-E3-08 VISHAY

完全替代

Rectifier Diode, Schottky, 1 Element, 0.07A, 70V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2

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