Datasheet > BAS19

BAS19

更新时间： 2024-02-06 17:29:55

品牌	Logo	应用领域
商升特 - SEMTECH		二极管开关光电二极管高压
页数	文件大小	规格书
1页	131K
描述
HIGH VOLTAGE SWITCHING DIODES

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BAS19 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.6	二极管类型：	RECTIFIER DIODE
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

BAS19 数据手册

BAS19, BAS20, BAS21

HIGH VOLTAGE SWITCHING DIODES

BAS19

BAS20

BAS21

Marking Code: HA

Marking Code: HB

Marking Code: HC

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_R

Value

Unit

BAS19

BAS20

BAS21

120

200

250

Continuous Reverse Voltage

Continuous Forward Current

I_F

200

625

Peak Forward Surge Current

Total Device Dissipation FR-5 Board ¹⁾

I_FM(surge)

P_D

R_θJA

P_D

225

1.8

T_A=25 C

mW/ C

Derate above 25 C

Thermal Resistance Junction to Ambient

556

C/W

Total Device Dissipation Alumina Substrate ²⁾

300

2.4

T_A=25 C

mW/ C

Derate above 25 C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature Range

R_θJA

417

C/W

T_J,T_S

-55 to +150

Characteristics at T_j= 25 C

Parameter

Symbol

Min.

Max.

Unit

Forward Voltage

at I_F= 100 mA

at I_F= 200 mA

V_F

1.25

Reverse Breakdown Voltage

at I_BR= 100 µA

BAS19

V_(BR)

120

200

250

BAS20

BAS21

at I_BR= 100 µA

Reverse Voltage Leakage Current

at V_R= 100 V

at V_R= 150 V

I_R

0.1

100

µA

BAS19

BAS20

BAS21

BAS19

BAS20

BAS21

at V_R= 200 V

at V_R= 100 V, T_J= 150 C

at V_R= 150 V, T_J= 150 C

at V_R= 200 V, T_J= 150 C

Diode Capacitance

at f = 1 MHz

C_d

t_rr

Reverse Recovery Time

at I_F= I_R= 30 mA, I_R(REC)= 3 mA, R_L= 100 Ω

¹⁾FR-5=1 x 0.75 x 0.062 in.

²⁾Alumina=0.4 x 0.3 x 0.024in.99.5% alumina.

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 19/12/2005

下载PDF

与BAS19相关器件

型号	品牌	描述	获取价格	数据表
BAS19, BAS20, BAS21	VISHAY	Small Signal Switching Diodes, High Voltage	获取价格
BAS19,215	NXP	BAS19 - High-voltage switching diode TO-236 3-Pin	获取价格
BAS19,235	NXP	BAS19 - High-voltage switching diode TO-236 3-Pin	获取价格
BAS19/E8	VISHAY	Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, TO-236AB	获取价格
BAS19/E9	VISHAY	Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, TO-236AB	获取价格
BAS19/T3	NXP	DIODE 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode	获取价格