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BAS16WT-TP PDF预览

BAS16WT-TP

更新时间: 2024-02-26 16:32:28
品牌 Logo 应用领域
美微科 - MCC 整流二极管开关光电二极管
页数 文件大小 规格书
3页 156K
描述
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

BAS16WT-TP 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.3配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.15 W最大反向恢复时间:0.006 µs
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAS16WT-TP 数据手册

 浏览型号BAS16WT-TP的Datasheet PDF文件第2页浏览型号BAS16WT-TP的Datasheet PDF文件第3页 
M C C  
TM  
20736 Marilla Street Chatsworth  
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ꢆꢇꢈꢉꢊꢋꢂꢌꢍꢄꢍ ꢂ!ꢎꢄ"#ꢃꢅꢅ  
$ꢏ%ꢋꢂ   ꢌꢍꢄꢍ ꢂ!ꢎꢄ"#ꢃꢅꢃ  
Micro Commercial Components  
BAS16  
Features  
·
·
Low Current Leakage  
Low Cost  
Small Outline Surface Mount Package  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Marking :A6  
350mW 100Volt  
Switching Diode  
x
SOT-23  
A
D
Maximum Ratings  
B
C
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 357K/W Junction To Ambient  
F
E
H
G
J
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Reverse Voltage  
Peak Reverse  
Voltage  
Peak Forward  
Current  
Power Dissipation  
Peak Forward Surge  
Current  
VR  
VRM  
75V  
100V  
DIMENSIONS  
MM  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
IF  
300mA  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
PTOT  
IFSM  
350mW  
1A  
t=1s, None Repet.  
F
G
H
J
Maximum  
.085  
.37  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Typical Junction  
Capacitance  
Reverse Recovery  
Time  
VF  
IR  
1.25V  
IFM = 150mA;  
TJ = 25°C*  
VR=75Volts  
TJ = 25°C  
K
Suggested Solder  
Pad Layout  
1µA  
50µA  
.031  
.800  
TJ = 150°C  
.035  
.900  
CJ  
Trr  
2pF  
4ns  
Measured at  
1.0MHz, VR=0V  
IF=10mA  
.079  
2.000  
inches  
mm  
VR = 6.0V  
RL=100Ω  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
.037  
.950  
.037  
.950  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  

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