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BAS16WX-T PDF预览

BAS16WX-T

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 349K
描述
Rectifier Diode,

BAS16WX-T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.56JESD-609代码:e0
湿度敏感等级:1端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

BAS16WX-T 数据手册

 浏览型号BAS16WX-T的Datasheet PDF文件第2页浏览型号BAS16WX-T的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
BAS16WX  
Micro Commercial Components  
Features  
l
High Conductance  
High Speed  
Switching Diode  
350mW  
l
Fast Switching Speed  
l
l
Surface Mount Package Ideally Suited for Automatic Insertion  
For General Purpose Switching Applications  
Mechanical Data  
l Marking: A6/T4  
SOD323  
l Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
A
B
l Polarity: Indicated by Cathode Band  
C
E
Maximum Ratings @ 25oC Unless Otherwise Specified  
VRM  
VRRM  
Non-Repetitive Peak Reverse Volt.  
85  
V
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRWM  
75  
H
D
VR  
VR(RMS)  
RMS Reverse Voltage  
53  
V
IFM  
Io  
Forward Continuous Current(Note1)  
200  
mA  
mA  
J
G
Average Rectified Output Current  
Non-Repetitive Peak @ t<=1.0s  
Forward Surge Current @ t=10us  
Power Dissipation(Note 1)  
100  
2
1
DIMENSIONS  
MM  
IFSM  
A
DIM  
INCHES  
NOTE  
MIN  
MAX  
.107  
.071  
.053  
.045  
.016  
.018  
.010  
.006  
MIN  
2.30  
1.60  
1.15  
0.80  
0.25  
0.10  
0.10  
-----  
MAX  
2.70  
1.80  
1.35  
1.15  
0.40  
0.45  
0.25  
0.15  
Pd  
R
350  
mW  
A
B
C
D
E
G
H
J
.090  
.063  
.045  
.031  
.010  
.004  
.004  
-----  
Thermal Resistance(Note 1)  
315  
-55 to  
+150  
K/W  
oC  
Operation/Storage Temp. Range  
Tj, TSTG  
Electrical Characteristics @ 25oC Unless Otherwise Specified  
0.715  
0.855  
1
IF=1.0mA  
IF=10mA  
IF=50mA  
IF=150mA  
Maximum Forward  
Voltage Drop  
VFM  
V
SUGGESTED SOLDER  
PAD LAYOUT  
1.25  
0.074"  
Maximum Peak  
Reverse Current  
IRM  
1.0  
50  
uA VR=75V Tj=25oC  
uA VR=75V Tj=150oC  
0.027”  
Junction Capacitance  
Cj  
2
6
pF VR=0V, f=1.0MHz  
IF=IR=10mA, Irr=0.1IR,  
RL=100 OHM  
ns  
Reverse Recovery Time  
trr  
0.022”  
Note: 1. Valid provided that terminals are kept at ambient temperature  
www.mccsemi.com  
1 of 3  
Revision: 6  
2006/05/13  

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