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BAS16WX_13 PDF预览

BAS16WX_13

更新时间: 2024-01-20 17:35:06
品牌 Logo 应用领域
美微科 - MCC 二极管开关
页数 文件大小 规格书
3页 251K
描述
High Speed Switching Diode 350mW

BAS16WX_13 数据手册

 浏览型号BAS16WX_13的Datasheet PDF文件第2页浏览型号BAS16WX_13的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
BAS16WX  
Micro Commercial Components  
Features  
High Conductance  
High Speed  
Switching Diode  
350mW  
Fast Switching Speed  
Surface Mount Package Ideally Suited for Automatic Insertion  
For General Purpose Switching Applications  
Lead Free Finish/RoHS Compliant("P" Suffix  
designates RoHS Compliant. See ordering information)  
Halogen free available upon request by adding suffix "-HF"  
Mechanical Data  
SOD323  
Marking: A6/T4  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Polarity: Indicated by Cathode Band  
A
B
C
E
Maximum Ratings @ 25oC Unless Otherwise Specified  
VRM  
VRRM  
Non-Repetitive Peak Reverse Volt.  
85  
V
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRWM  
75  
H
D
VR  
VR(RMS)  
RMS Reverse Voltage  
53  
V
IFM  
Io  
Forward Continuous Current(Note1)  
200  
mA  
mA  
J
G
Average Rectified Output Current  
Non-Repetitive Peak @ t<=1.0s  
Forward Surge Current @ t=10us  
Power Dissipation(Note 1)  
100  
2
1
DIMENSIONS  
MM  
IFSM  
A
DIM  
INCHES  
NOTE  
MIN  
MAX  
.107  
.071  
.053  
.045  
.016  
.018  
.010  
.006  
MIN  
2.30  
1.60  
1.15  
0.80  
0.25  
0.10  
0.10  
-----  
MAX  
2.70  
1.80  
1.35  
1.15  
0.40  
0.45  
0.25  
0.15  
Pd  
R
350  
mW  
A
B
C
D
E
G
H
J
.090  
.063  
.045  
.031  
.010  
.004  
.004  
-----  
Thermal Resistance(Note 1)  
315  
-55 to  
+150  
K/W  
oC  
Operation/Storage Temp. Range  
Tj, TSTG  
Electrical Characteristics @ 25oC Unless Otherwise Specified  
0.715  
0.855  
1
IF=1.0mA  
IF=10mA  
IF=50mA  
IF=150mA  
Maximum Forward  
Voltage Drop  
VFM  
V
SUGGESTED SOLDER  
PAD LAYOUT  
1.25  
0.074"  
Maximum Peak  
Reverse Current  
IRM  
1.0  
50  
uA VR=75V Tj=25oC  
uA VR=75V Tj=150oC  
0.027”  
Junction Capacitance  
Cj  
trr  
2
6
pF VR=0V, f=1.0MHz  
IF=IR=10mA, Irr=0.1IR,  
RL=100 OHM  
ns  
Reverse Recovery Time  
0.022”  
Notes: 1. Valid provided that terminals are kept at ambient temperature  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

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