BAS16V-TP

更新时间： 2024-10-02 13:05:51

品牌	Logo	应用领域
美微科 - MCC		整流二极管开关光电二极管
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3页	156K
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中文翻译

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数据手册
替代型号

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BAS16V-TP 数据手册

M C C

20736 Marilla Street Chatsworth

ꢀꢁꢂꢃꢄꢅꢄꢄ

ꢆꢇꢈꢉꢊꢋꢂꢌꢍꢄꢍ ꢂ!ꢎꢄ"#ꢃꢅꢅ

$ꢏ%ꢋꢂ ꢂ ꢂ ꢌꢍꢄꢍ ꢂ!ꢎꢄ"#ꢃꢅꢃ

Micro Commercial Components

BAS16

Features

•

Low Current Leakage

Low Cost

Small Outline Surface Mount Package

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Marking :A6

350mW 100Volt

Switching Diode

SOT-23

Maximum Ratings

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 357K/W Junction To Ambient

Electrical Characteristics @ 25°C Unless Otherwise Specified

Reverse Voltage

Peak Reverse

Voltage

Peak Forward

Current

Power Dissipation

Peak Forward Surge

Current

V_R

V_RM

75V

100V

DIMENSIONS

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

I_F

300mA

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

P_TOT

I_FSM

350mW

t=1s, None Repet.

Maximum

.085

.37

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Typical Junction

Capacitance

Reverse Recovery

Time

V_F

I_R

1.25V

I_FM= 150mA;

T_J= 25°C*

V_R=75Volts

T_J= 25°C

Suggested Solder

Pad Layout

1µA

50µA

.031

.800

T_J= 150°C

.035

.900

C_J

T_rr

2pF

4ns

Measured at

1.0MHz, V_R=0V

I_F=10mA

.079

2.000

inches

V_R= 6.0V

R_L=100Ω

*Pulse test: Pulse width 300 µsec, Duty cycle 2%

.037

.950

.037

.950

www.mccsemi.com

Revision: A

2011/01/01

1 of 3

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BAS16V-TP 替代型号

型号	品牌	替代类型	描述	数据表
BAS16V-7	DIODES	功能相似	DUAL SURFACE MOUNT SWITCHING DIODE
BAS16DXV6T1G	ONSEMI	功能相似	Dual Switching Diode
BAS16DXV6T1	ONSEMI	功能相似	Dual Switching Diode

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