Datasheet > BAS16VVT/R

BAS16VVT/R

更新时间： 2024-11-18 15:44:31

品牌	Logo	应用领域
恩智浦 - NXP		测试
页数	文件大小	规格书
20页	133K
描述
ARRAY OF INDEPENDENT DIODES,SOT-666

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中文翻译

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技术参数
数据手册

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BAS16VVT/R 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	最大正向电压 (VF)：	0.715 V
最高工作温度：	150 °C	最低工作温度：	-65 °C
最大功率耗散：	0.18 W	最大重复峰值反向电压：	100 V
最大反向电流：	50 µA	最大反向恢复时间：	0.004 µs
反向测试电压：	80 V	子类别：	Other Diodes
表面贴装：	YES	Base Number Matches：	1

BAS16VVT/R 数据手册

BAS16 series

High-speed switching diodes

Rev. 05 — 25 August 2008

Product data sheet

1. Product proﬁle

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)

plastic packages.

Table 1.

Product overview

Type number

Package

NXP

Conﬁguration

Package

conﬁguration

JEITA

JEDEC

TO-236AB single

BAS16

SOT23

small

BAS16H

BAS16J

SOD123F

SOD323F

single

small and ﬂat lead

SC-90

very small and ﬂat

lead

BAS16L

SOD882

single

leadless ultra

small

BAS16T

SOT416

SOT666

SC-75

single

ultra small

BAS16VV

triple isolated

ultra small and ﬂat

lead

BAS16VY

BAS16W

BAS316

BAS516

SOT363

SOT323

SOD323

SOD523

SC-88

SC-70

SC-76

SC-79

triple isolated

single

very small

single

ultra small and ﬂat

lead

1.2 Features

I High switching speed: t_rr≤ 4 ns

I Low leakage current

I Low capacitance

I Reverse voltage: V_R≤ 100 V

I Small SMD plastic packages

I Repetitive peak reverse voltage:

_RRM≤ 100 V

1.3 Applications

I High-speed switching

I General-purpose switching

12 3 4 5 6 7...20

中文翻译

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