Datasheet > BAS16VY-Q

BAS16VY-Q

更新时间： 2024-11-19 11:14:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	215K
描述
High-speed switching diodeProduction

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BAS16VY-Q 数据手册

BAS16VY-Q

High-speed switching diode

5 July 2021

Product data sheet

1. General description

High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted

Device (SMD) plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 4 ns

•

Low capacitance

Low leakage current

Reverse voltage: V_R≤ 100 V

Repetitive peak reverse voltage: V_RRM≤ 100 V

Very small SMD plastic packages

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-speed switching

General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

V_R

I_R

reverse voltage

reverse current

100

0.5

V_R= 80 V; T_amb= 25 °C

µA

t_rr

reverse recovery time I_F= 10 mA; I_R= 10 mA; R_L= 100 Ω;

I_R(meas)= 1 mA; T_amb= 25 °C

12 3 4 5 6 7...11

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