Datasheet > BAS16VV

BAS16VV

更新时间： 2024-11-19 14:54:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		PC 光电二极管
页数	文件大小	规格书
4页	1969K
描述
SOT-563

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中文翻译

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数据手册

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BAS16VV 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-563 Plastic-Encapsulate Diodes

BAS16VV

SWITCHING

SOT-563

DIODE FEATURES

Fast Switching Speed

For General Purpose Switching Applications

High Conductance

Marking: 53

Solid point=Pin1 positioning point

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

Parameter

Symbol

Limit

Unit

Non-Repetitive Peak Reverse Voltage

V_RM

100

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

100

RMS Reverse Voltage

V_R(RMS)

I_FM

300

Forward Continuous Current

Average Rectified Output Current

I_O

200

I_FSM

2.0

Non-Repetitive Peak

Forward Surge Current @t=8.3ms

Power Dissipation

150

℃/W

℃

Thermal Resistance Junction to Ambient

833

R_θJA

Operation Junction and Storage Temperature Range

T_J,T_STG

-55~+150

Electrical Ratings @Ta=25℃

Parameter

Symbol

V _(BR)

V_F1

Min

Typ

Max

Unit

Conditions

I_R=100μA

I_F=1mA

Reverse breakdown voltage

100

0.715

0.855

1.0

1.25

V_F2

I_F=10mA

I_F=50mA

I_F=150mA

V_R=75V

Forward voltage

V_F3

V_F4

I_R1

μA

Reverse current

I_R2

V_R=20V

Capacitance between terminals

Reverse recovery time

C_T

V_R=0V,f=1MHz

I_F=I_R=10mA

t_rr

Irr=0.1XI_R,R_L=100Ω

www.jscj-elec.com

Rev. - 1.0

12 3 4

中文翻译

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