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BA783-HG3-08 PDF预览

BA783-HG3-08

更新时间： 2024-11-03 03:53:43
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
3页 72K
描述
Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, GREEN PACKAGE-2

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BA783-HG3-08 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：R-PDSO-G2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.60风险等级：5.72
配置：SINGLE最大二极管电容：1.2 pF
二极管元件材料：SILICON二极管类型：MIXER DIODE
最大正向电压 (VF)：1 V频带：VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 代码：R-PDSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：125 °C
最低工作温度：-55 °C最大输出电流：0.1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
参考标准：AEC-Q101最大重复峰值反向电压：35 V
子类别：Rectifier Diodes表面贴装：YES
端子面层：MATTE TIN端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：10
Base Number Matches：1

BA783-HG3-08 数据手册

 浏览型号BA783-HG3-08的Datasheet PDF文件第2页浏览型号BA783-HG3-08的Datasheet PDF文件第3页 
BA782-G, BA783-G  
Vishay Semiconductors  
www.vishay.com  
Band Switching Diodes  
FEATURES  
• Silicon epitaxial planar diode switches  
• AEC-Q101 qualified  
• Base P/N-G3 - green, commercial grade  
• Base P/N-HG3 - green, AEC-Q101 qualified  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
MECHANICAL DATA  
DESCRIPTION  
Case: SOD-123  
For electric bandswitching in radio and TV tuners in the  
frequency range of (50 to 1000) MHz. The dynamic forward  
resistance is constant and very small over a wide range of  
frequency and forward current. The reverse capacitance is  
also small and largely independent of the reverse voltage.  
Weight: approx. 9.4 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
TYPE MARKING  
REMARKS  
BA782-G3-08 or BA782-G3-18  
BA782-HG3-08 or BA782-HG3-18  
BA783-G3-08 or BA783-G3-18  
BA783-HG3-08 or BA783-HG3-18  
BA782-G  
R4  
Tape and reel  
BA783-G  
R5  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
35  
UNIT  
V
Reverse voltage  
VR  
IF  
Forward continuous current  
100  
mA  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
125  
UNIT  
°C  
Junction temperature  
Storage temperature range  
Operating temperature range  
Tj  
Tstg  
Top  
- 55 to + 150  
- 55 to + 125  
°C  
°C  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Forward voltage  
Reverse current  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
TYP.  
MAX.  
1000  
50  
UNIT  
mV  
nA  
pF  
pF  
pF  
IF = 100 mA  
VF  
IR  
VR = 20 V  
f = 1 MHz, VR = 1 V  
CD1  
CD2  
CD2  
rf1  
1.5  
Diode capacitance  
BA782-G  
BA783-G  
BA782-G  
BA783-G  
BA782-G  
BA783-G  
1.25  
1.2  
f = 1 MHz, VR = 3 V  
0.7  
f = (50 to 1000) MHz, IF = 3 mA  
f = (50 to 1000) MHz, IF = 10 mA  
rf1  
1.2  
Dynamic forward resistance  
Series inductance across case  
rf2  
0.5  
rf2  
0.9  
LS  
2.5  
nH  
Rev. 1.1, 14-May-14  
Document Number: 85240  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123

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