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BA783-V

更新时间: 2024-01-08 12:33:14
品牌 Logo 应用领域
威世 - VISHAY 二极管开关
页数 文件大小 规格书
3页 63K
描述
Band Switching Diodes

BA783-V 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.76
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
元件数量:1最高工作温度:125 °C
最大输出电流:0.1 A最大重复峰值反向电压:35 V
子类别:Rectifier Diodes表面贴装:YES
Base Number Matches:1

BA783-V 数据手册

 浏览型号BA783-V的Datasheet PDF文件第2页浏览型号BA783-V的Datasheet PDF文件第3页 
BA782-V, BA783-V  
Vishay Semiconductors  
Band Switching Diodes  
FEATURES  
• These diodes are also available in SOD-323  
case with the type designations BA782S-V and  
BA783S-V  
• AEC-Q101 qualified  
17431  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
MECHANICAL DATA  
Case: SOD-123  
DESCRIPTION  
Silicon epitaxial planar diode switches  
Weight: approx. 10.3 mg  
For electric bandswitching in radio and TV tuners in the  
frequency range of (50 to 1000) MHz. The dynamic forward  
resistance is constant and very small over a wide range of  
frequency and forward current. The reverse capacitance is  
also small and largely independent of the reverse voltage.  
Packaging codes/options:  
GS18/10K per 13" reel (8 mm tape), 10K/box  
GS08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
TYPE MARKING  
REMARKS  
Tape and reel  
Tape and reel  
BA782-V  
BA783-V  
BA782-V-GS18 or BA782-V-GS08  
BA783-V-GS18 or BA783-V-GS08  
R2  
R3  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
V
Reverse voltage  
VR  
IF  
35  
Forward continuous current  
100  
mA  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
125  
UNIT  
°C  
Junction temperature  
Storage temperature range  
Tj  
Tstg  
- 55 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Forward voltage  
Reverse current  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
TYP.  
MAX.  
1000  
50  
UNIT  
mV  
nA  
pF  
pF  
pF  
Ω
IF = 100 mA  
VF  
V
R = 20 V  
IR  
f = 1 MHz, VR = 1 V  
CD1  
CD2  
CD2  
rf1  
1.5  
Diode capacitance  
BA782-V  
BA783-V  
BA782-V  
BA783-V  
BA782-V  
BA783-V  
1.25  
1.2  
f = 1 MHz, VR = 3 V  
0.7  
f = (50 to 1000) MHz, IF = 3 mA  
f = (50 to 1000) MHz, IF = 10 mA  
rf1  
1.2  
Ω
Dynamic forward resistance  
Series inductance across case  
rf2  
0.5  
Ω
rf2  
0.9  
Ω
LS  
2.5  
nH  
Document Number: 85708  
Rev. 1.4, 05-Aug-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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