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BA783S PDF预览

BA783S

更新时间: 2024-11-01 22:39:23
品牌 Logo 应用领域
威世 - VISHAY 微波混频二极管光电二极管
页数 文件大小 规格书
2页 85K
描述
Bandswitching Diodes

BA783S 技术参数

是否无铅:不含铅生命周期:Transferred
零件包装代码:SOD包装说明:R-PDSO-G2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.2Is Samacsys:N
配置:SINGLE最大二极管电容:1.2 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCYJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
表面贴装:YES技术:PLANAR DOPED BARRIER
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

BA783S 数据手册

 浏览型号BA783S的Datasheet PDF文件第2页 
BA782S, BA783S  
Bandswitching Diodes  
FEATURES  
SOD-323  
Silicon Epitaxial Planar Diode Switches  
.012 (0.3)  
For electronic bandswitching in radio and  
TV tuners in the frequency range of  
Cathode Mark  
50 … 1000 MHz.The dynamic forward resistance  
is constant and very small over a wide range of  
frequency and forward current. The reverse  
capacitance is also small and largely  
Top View  
independent of the reverse voltage.  
.059 (1.5)  
.043 (1.1)  
These diodes are also available in SOD-123 case  
with the type designations BA782 and BA783.  
min. .010 (0.25)  
MECHANICAL DATA  
Case: SOD-323 Plastic Package  
Weight: approx. 0.004 g  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at  
ambient temperature unless otherwise specified  
25 °C  
Symbol  
Value  
35  
Unit  
V
Reverse Voltage  
VR  
IF  
Forward Continuous Current at Tamb = 25 °C  
Junction Temperature  
100  
mA  
°C  
Tj  
125  
Storage Temperature Range  
TS  
–55 to +125  
°C  
4/98  
258  

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