Datasheet > BA783S-HE3-18

BA783S-HE3-18

更新时间： 2024-11-03 03:43:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	72K
描述
Mixer Diode, Ultra High Frequency, Silicon, ROHS COMPLIANT PACKAGE-2

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BA783S-HE3-18 数据手册

BA782S, BA783S

Vishay Semiconductors

www.vishay.com

Band Switching Diodes

FEATURES

• Silicon epitaxial planar diode switches

• AEC-Q101 qualified

• Base P/N-E3 - RoHS-compliant, commercial

grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101

qualified

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

DESCRIPTION

MECHANICAL DATA

For electric bandswitching in radio and TV tuners in the

frequency range of (50 to 1000) MHz. The dynamic forward

resistance is constant and very small over a wide range of

frequency and forward current. The reverse capacitance is

also small and largely independent of the reverse voltage.

Case: SOD-323

Weight: approx. 4.3 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

PARTS TABLE

PART

ORDERING CODE

TYPE MARKING

REMARKS

BA782S-E3-08 or BA782S-E3-18

BA782S-HE3-08 or BA782S-HE3-18

BA783S-E3-08 or BA783S-E3-18

BA783S-HE3-08 or BA783S-HE3-18

BA782S

Tape and reel

BA783S

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

I_F

Forward continuous current

100

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

125

UNIT

°C

Junction temperature

Storage temperature range

Operating temperature range

T_j

T_stg

T_op

- 55 to + 150

- 55 to + 125

°C

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

Forward voltage

Reverse current

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

1000

UNIT



I_F= 100 mA

V_F

I_R

_R= 20 V

f = 1 MHz, V_R= 1 V

C_D1

C_D2

r_f1

1.5

Diode capacitance

BA782S

BA783S

BA782S

BA783S

BA782S

BA783S

1.25

1.2

f = 1 MHz, V_R= 3 V

0.7

f = (50 to 1000) MHz, I_F= 3 mA

f = (50 to 1000) MHz, I_F= 10 mA

r_f1

1.2



Dynamic forward resistance

Series inductance across case

Rev. 1.7, 25-Feb-13

r_f2

0.5



r_f2

0.9



L_S

2.5

Document Number: 85709

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3

中文翻译

下载PDF

与BA783S-HE3-18相关器件

型号	品牌	获取价格	描述	数据表
BA783S-HG3-08	VISHAY	获取价格	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, GREEN PACKAGE-2
BA783S-HG3-18	VISHAY	获取价格	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, GREEN PACKAGE-2
BA783S-V	VISHAY	获取价格	Band Switching Diodes
BA783-V	VISHAY	获取价格	Band Switching Diodes
BA78M05	ROHM	获取价格	1A Output 78 series Regulators 500mA Output 78 series Regulators
BA78M05CP	ROHM	获取价格	Three-Terminal Regulator
BA78M05CP-E1	ROHM	获取价格	Regulator, 1 Output, BIPolar,
BA78M05CPE2	ROHM	获取价格	1A Output 78 series Regulators 500mA Output 78 series Regulators
BA78M05CP-E2	ROHM	获取价格	Fixed Positive Standard Regulator, 5VBIPolar, ROHS COMPLIANT, TO-220, 3 PIN
BA78M05FP	ROHM	获取价格	Three-Terminal Regulator

与BA783S-HE3-18相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

5
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

BA783S-HE3-18

BA783S-HE3-18 数据手册

与BA783S-HE3-18相关器件

与BA783S-HE3-18相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BA783S-HE3-18

BA783S-HE3-18 数据手册

与BA783S-HE3-18相关器件

与BA783S-HE3-18相关文章

您还可以找

您在本页遇到什么问题？