Datasheet > BA783-HG3-18

BA783-HG3-18

更新时间： 2024-11-03 03:53:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	72K
描述
Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, GREEN PACKAGE-2

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数据手册

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BA783-HG3-18 数据手册

BA782-G, BA783-G

Vishay Semiconductors

www.vishay.com

Band Switching Diodes

FEATURES

• Silicon epitaxial planar diode switches

• AEC-Q101 qualified

• Base P/N-G3 - green, commercial grade

• Base P/N-HG3 - green, AEC-Q101 qualified

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

MECHANICAL DATA

DESCRIPTION

Case: SOD-123

For electric bandswitching in radio and TV tuners in the

frequency range of (50 to 1000) MHz. The dynamic forward

resistance is constant and very small over a wide range of

frequency and forward current. The reverse capacitance is

also small and largely independent of the reverse voltage.

Weight: approx. 9.4 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

PARTS TABLE

PART

ORDERING CODE

TYPE MARKING

REMARKS

BA782-G3-08 or BA782-G3-18

BA782-HG3-08 or BA782-HG3-18

BA783-G3-08 or BA783-G3-18

BA783-HG3-08 or BA783-HG3-18

BA782-G

Tape and reel

BA783-G

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

I_F

Forward continuous current

100

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

125

UNIT

°C

Junction temperature

Storage temperature range

Operating temperature range

T_j

T_stg

T_op

- 55 to + 150

- 55 to + 125

°C

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

Forward voltage

Reverse current

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

1000

UNIT



I_F= 100 mA

V_F

I_R

V_R= 20 V

f = 1 MHz, V_R= 1 V

C_D1

C_D2

r_f1

1.5

Diode capacitance

BA782-G

BA783-G

BA782-G

BA783-G

BA782-G

BA783-G

1.25

1.2

f = 1 MHz, V_R= 3 V

0.7

f = (50 to 1000) MHz, I_F= 3 mA

f = (50 to 1000) MHz, I_F= 10 mA

r_f1

1.2



Dynamic forward resistance

Series inductance across case

r_f2

0.5



r_f2

0.9



L_S

2.5

Rev. 1.1, 14-May-14

Document Number: 85240

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3

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与BA783-HG3-18相关器件

型号	品牌	获取价格	描述	数据表
BA783S	VISHAY	获取价格	Bandswitching Diodes
BA783S/D3	VISHAY	获取价格	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon
BA783S/D4	VISHAY	获取价格	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon
BA783S/D6	VISHAY	获取价格	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon
BA783S-E3-08	VISHAY	获取价格	Mixer Diode, Ultra High Frequency, Silicon, ROHS COMPLIANT PACKAGE-2
BA783S-E3-18	VISHAY	获取价格	Mixer Diode, Ultra High Frequency, Silicon, ROHS COMPLIANT PACKAGE-2
BA783S-G3-08	VISHAY	获取价格	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, GREEN PACKAGE-2
BA783S-G3-18	VISHAY	获取价格	DIODE BAND SW 100MA SOD323
BA783S-GS18	VISHAY	获取价格	Rectifier Diode, 1 Element,
BA783S-HE3-08	VISHAY	获取价格	Mixer Diode, Ultra High Frequency, Silicon, ROHS COMPLIANT PACKAGE-2

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