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ATF-38143-TR2G PDF预览

ATF-38143-TR2G

更新时间: 2024-10-31 19:22:55
品牌 Logo 应用领域
安捷伦 - AGILENT /
页数 文件大小 规格书
13页 132K
描述
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN

ATF-38143-TR2G 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
HTS代码:8541.21.00.75风险等级:5.11
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:4.5 VFET 技术:HIGH ELECTRON MOBILITY
最高频带:X BANDJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:DEPLETION MODE最高工作温度:160 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:0.58 W
最小功率增益 (Gp):15 dB认证状态:Not Qualified
子类别:FET RF Small Signal表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

ATF-38143-TR2G 数据手册

 浏览型号ATF-38143-TR2G的Datasheet PDF文件第2页浏览型号ATF-38143-TR2G的Datasheet PDF文件第3页浏览型号ATF-38143-TR2G的Datasheet PDF文件第4页浏览型号ATF-38143-TR2G的Datasheet PDF文件第5页浏览型号ATF-38143-TR2G的Datasheet PDF文件第6页浏览型号ATF-38143-TR2G的Datasheet PDF文件第7页 
ATF-38143 Low Noise  
Pseudomorphic HEMT in a Surface  
Mount Plastic Package  
Data Sheet  
Features  
• Lead-free Option Available  
• Low Noise Figure  
Description  
Surface Mount Package  
SOT-343  
• Excellent Uniformity in  
Product Specifications  
Agilent Technologies’s ATF-38143  
is a high dynamic range, low  
noise, PHEMT housed in a 4-lead  
SC-70 (SOT-343) surface mount  
plastic package.  
• Low Cost Surface Mount  
Small Plastic Package  
SOT-343 (4 lead SC-70)  
• Tape-and-Reel Packaging  
Option Available  
Based on its featured perfor-  
mance, ATF-38143 is suitable for  
applications in cellular and PCS  
handsets, LEO systems, MMDS,  
and other systems requiring super  
low noise figure with good  
Pin Connections and  
Package Marking  
Specifications  
1.9 GHz; 2V, 10 mA (Typ.)  
• 0.4 dB Noise Figure  
DRAIN  
SOURCE  
intercept in the 450 MHz to  
10 GHz frequency range.  
• 16 dB Associated Gain  
• 12.0 dBm Output Power at  
1 dB Gain Compression  
SOURCE  
GATE  
• 22.0 dBm Output 3rd Order  
Intercept  
Note: Top View. Package marking  
provides orientation and identification.  
“8P” = Device code  
Applications  
• Low Noise Amplifier for  
Cellular/PCS Handsets  
“x” = Date code character. A new  
character is assigned for each month, year.  
Attention:  
Observe precautions for  
handling electrostatic  
sensitive devices.  
• LNA for WLAN, WLL/RLL,  
LEO, and MMDS  
Applications  
ESD Machine Model (Class A)  
ESD Human Body Model (Class 1)  
• General Purpose Discrete  
PHEMT for Other Ultra Low  
Noise Applications  
Refer to Agilent Application Note A004R:  
Electrostatic Discharge Damage and Control.  

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