Datasheet > ATF413S12C

ATF413S12C

更新时间： 2024-09-14 01:16:31

品牌	Logo	应用领域
POSEICO		开关
页数	文件大小	规格书
2页	68K
描述
FAST SWITCHING THYRISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ATF413S12C 数据手册

POSEICO SPA

Via N. Lorenzi 8, 16152 Genova - ITALY

Tel. +39 010 6556234 - Fax +39 010 6557519

Sales Office:

POSEICO

POSEICO SPA

POwer SEmiconductors Italian COrporation

Tel. +39 010 6556775 - Fax +39 010 6445141

FAST SWITCHING THYRISTOR

ATF413

Repetitive voltage up to

Mean on-state current

Surge current

1200 V

705 A

9 kA

TARGET SPECIFICATION

Turn-off time

12 µs

mag 06 - ISSUE : 04

Symbol

Characteristic

Conditions

Value

Unit

[°C]

BLOCKING

V RRM

V RSM

V DRM

I RRM

I DRM

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Repetitive peak off-state voltage

Repetitive peak reverse current

Repetitive peak off-state current

125

1200

1300

1200

V=VRRM

V=VDRM

CONDUCTING

I T (AV)

I TSM

I² t

Mean on-state current

Surge on-state current, non repetitive

I² t

180°sin, 50 Hz, Th=55°C, double side cooled

180°sin, 1 kHz, Th=55°C, double side cooled

sine wave, 10 ms

705

565

125

without reverse voltage

405 x1E3

2,46

1,55

A²s

V T

On-state voltage

On-state current =

1400 A

125

V T(TO)

r T

Threshold voltage

On-state slope resistance

125 0,650

mohm

SWITCHING

di/dt

dv/dt

Critical rate of rise of on-state current, min

Critical rate of rise of off-state voltage, min

Gate controlled delay time, typical

From 75% VDRM up to 1200 A, gate 10V 5 ohm

Linear ramp up to 70% of VDRM

125

500

600

0,85

A/µs

V/µs

µs

VD=100V, gate source 20V, 10 ohm , tr=1 µs

Circuit commutated turn-off time

di/dt = 60

dV/dt = 200 V/µs , up to 80% VDRM

di/dt = 60 A/µs, I I = 1000

VR = 50

A/µs, I I = 1000

125

µs

Q rr

I rr

I H

Reverse recovery charge

Peak reverse recovery current

Holding current, typical

125

µC

VD=5V, gate open circuit

VD=5V, tp=30µs

I L

Latching current, typical

GATE

V GT

I GT

Gate trigger voltage

VD=5V

125

3,5

350

0,25

Gate trigger current

VD=5V

V GD

V FGM

Non-trigger gate voltage, min.

Peak gate voltage (forward)

Peak gate current

VD=VDRM

FGM

V RGM

P GM

Peak gate voltage (reverse)

Peak gate power dissipation

Average gate power dissipation

Pulse width 100 µs

150

P G(AV)

MOUNTING

R th(j-h)

T j

Thermal impedance, DC

Operating junction temperature

Mounting force

Junction to heatsink, double side cooled

°C/kW

°C

-30 / 125

11.0 / 13.0

320

Mass

tq code

D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs

M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs

T 60 µs U 70 µs W 80 µs X 100µs Y 150µs

tq code

ORDERING INFORMATION : ATF413 S 12 C

VDRM&VRRM/100

standard specification

中文翻译

下载PDF

与ATF413S12C相关器件

型号	品牌	获取价格	描述	数据表
ATF414	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF414S12B	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF415	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF415S12B	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF416	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF416S12B	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF44100	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 800MA I(DSS) \| CHIP
ATF44101	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 800MA I(DSS) \| RFMOD
ATF-44101	AGILENT	获取价格	2-8 GHz Medium Power Gallium Arsenide FET
ATF45100	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 400MA I(DSS) \| CHIP

与ATF413S12C相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

78
AIC1781A 电池充电控制器深度解析
2024-09-03

69
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

100
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

114

产品中心

服务支持

精选活动

关于我们

帮助中心

ATF413S12C

ATF413S12C 数据手册

与ATF413S12C相关器件

与ATF413S12C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ATF413S12C

ATF413S12C 数据手册

与ATF413S12C相关器件

与ATF413S12C相关文章

您还可以找

您在本页遇到什么问题？