Datasheet > ATF401

ATF401

更新时间： 2024-11-02 01:16:31

品牌	Logo	应用领域
POSEICO		开关
页数	文件大小	规格书
3页	81K
描述
FAST SWITCHING THYRISTOR

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中文翻译

获取价格

数据手册

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ATF401 数据手册

POSEICO SPA

Via N. Lorenzi 8, 16152 Genova - ITALY

Tel. +39 010 6556234 - Fax +39 010 6557519

Sales Office:

POSEICO

POSEICO SPA

POwer SEmiconductors Italian COrporation

Tel. +39 010 6556775 - Fax +39 010 6445141

FAST SWITCHING THYRISTOR

ATF401

Repetitive voltage up to

Mean on-state current

Surge current

800 V

890 A

12 kA

20 µs

FINAL SPECIFICATION

Turn-off time

mag 06 - ISSUE : 05

Symbol

Characteristic

Conditions

Value

Unit

[°C]

BLOCKING

V RRM

V RSM

V DRM

I RRM

I DRM

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Repetitive peak off-state voltage

Repetitive peak reverse current

Repetitive peak off-state current

125

800

900

800

V=VRRM

V=VDRM

CONDUCTING

I T (AV)

I TSM

I² t

Mean on-state current

Surge on-state current, non repetitive

I² t

180°sin, 50 Hz, Th=55°C, double side cooled

180°sin, 1 kHz, Th=55°C, double side cooled

sine wave, 10 ms

890

770

125

without reverse voltage

720 x1E3

0,7

A²s

V T

On-state voltage

On-state current =

2000 A

125

V T(TO)

r T

Threshold voltage

1,35

On-state slope resistance

125 0,350

mohm

SWITCHING

di/dt

dv/dt

Critical rate of rise of on-state current, min

Critical rate of rise of off-state voltage, min

Gate controlled delay time, typical

From 75% VDRM up to 1200 A, gate 10V 5 ohm

Linear ramp up to 75% of VDRM

125

400

600

0,3

A/µs

V/µs

µs

VD=200V, gate source 20V, 10 ohm , tr=.5 µs

Circuit commutated turn-off time

di/dt = 60

dV/dt = 200 V/µs , up to 80% VDRM

di/dt = 60 A/µs, I I = 1000

VR = 50

A/µs, I I = 1000

125

µs

Q rr

I rr

I H

Reverse recovery charge

Peak reverse recovery current

Holding current, typical

125

µC

VD=5V, gate open circuit

VD=12V, tp=30µs

I L

Latching current, typical

GATE

V GT

I GT

Gate trigger voltage

VD=5V

125

3,5

350

0,25

Gate trigger current

VD=5V

V GD

V FGM

Non-trigger gate voltage, min.

Peak gate voltage (forward)

Peak gate current

VD=VDRM

FGM

V RGM

P GM

Peak gate voltage (reverse)

Peak gate power dissipation

Average gate power dissipation

Pulse width 100 µs

150

P G(AV)

MOUNTING

R th(j-h)

T j

Thermal impedance, DC

Operating junction temperature

Mounting force

Junction to heatsink, double side cooled

°C/kW

°C

-30 / 125

11.0 / 13.0

320

Mass

tq code

D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs

M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs

T 60 µs U 70 µs W 80 µs X 100µs Y 150µs

tq code

ORDERING INFORMATION : ATF401 S 08 A

VDRM&VRRM/100

standard specification

12 3

中文翻译

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与ATF401相关器件

型号	品牌	获取价格	描述	数据表
ATF401S08A	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF413	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF413S12C	POSEICO	获取价格	FAST SWITCHING THYRISTOR
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ATF414S12B	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF415	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF415S12B	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF416	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF416S12B	POSEICO	获取价格	FAST SWITCHING THYRISTOR
ATF44100	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 800MA I(DSS) \| CHIP

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