ATF-44101

更新时间： 2024-01-09 03:50:42

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	67K
描述
2-8 GHz Medium Power Gallium Arsenide FET

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技术参数
数据手册

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ATF-44101 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	FET 技术：	JUNCTION
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
子类别：	Other Transistors	Base Number Matches：	1

ATF-44101 数据手册

2–8 GHz Medium Power

Gallium Arsenide FET

Technical Data

ATF-44101

range.Thisnominally.5 micron

gate length GaAs FET is an

Features

100 mil Flange

• High Output Power:

32.0 dBmTypicalP _1dBat4 GHz

interdigitated four-cell structure

using airbridge interconnects

between source fingers. Total gate

periphery is 5 millimeters. Proven

gold based metallization systems

and nitride passivation assure a

rugged, reliable device.

• High Gain at 1 dB

Compression:

8.5 dBTypicalG _1dBat4 GHz

• High Power Efficiency:

35%Typicalat4 GHz

• Hermetic Metal-Ceramic

Stripline Package

This device is suitable for applica-

tions in space, airborne, military

ground and shipboard, and

commercial environments. It is

supplied in a hermetic high

reliability package with low

parasitic reactance and minimum

thermal resistance.

Description

The ATF-44101 is a gallium

arsenide Schottky-barrier-gate

field effect transistor designed for

medium power, linear amplifica-

tion in the 2 to 8 GHz frequency

Electrical Specifications, T_A= 25°C

Symbol

Parameters and Test Conditions

Units Min. Typ. Max.

P_{1 dB}

Power Output @ 1 dB Gain Compression:

V_DS=9 V, I_DS=500mA

f=4.0GHz dBm 31.0

f=6.0GHz

32.0

31.5

G_{1 dB}

1 dB Compressed Gain: V_DS= 9 V, I_DS= 500 mA

f=4.0GHz

f=6.0GHz

7.5

8.5

5.5

η_add

g_m

Efficiency@P :V_DS=9V, I_DS=500mA

f=4.0GHz

mmho

1dB

Transconductance:V_DS=2.5V, I_DS=500mA

Saturated Drain Current: V_DS= 1.75 V, V_GS= 0 V

Pinch-off Voltage: V_DS= 2.5 V, I_DS= 25 mA

300

I_DSS

V_P

800

-5.4

1300 1500

-4.0

-2.0

5-89

5965-8727E

12 3

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ATF45101	ETC	TRANSISTOR \| JFET \| N-CHANNEL \| 400MA I(DSS) \| RFMOD	获取价格
ATF-45101	AGILENT	2-8 GHz Medium Power Gallium Arsenide FET	获取价格
ATF45171	ETC	TRANSISTOR \| JFET \| N-CHANNEL \| 400MA I(DSS) \| RFMOD	获取价格
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ATF46100	ETC	TRANSISTOR \| JFET \| N-CHANNEL \| 200MA I(DSS) \| CHIP	获取价格