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AT68166F-YM15-ESCC PDF预览

AT68166F-YM15-ESCC

更新时间: 2024-01-24 20:32:24
品牌 Logo 应用领域
爱特美尔 - ATMEL 静态存储器
页数 文件大小 规格书
15页 339K
描述
Standard SRAM, 512KX32, 15ns, CMOS, CQFP68, 0.950 INCH, CERAMIC, QFP-68

AT68166F-YM15-ESCC 数据手册

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Features  
Can be used as either 1 off 512k x 32, 2 off 512k x 16 or 4 off 512k x 8  
Operating Voltage: 3.3V  
Access Time:  
– 15 ns for 3.3V biased only (AT68166F)  
– 25 ns & 17 ns for 5V Tolerant (AT68166FT)  
Very Low Power Consumption  
– Active: 650 mW per byte (Max) @ 15 ns - 540 mW per byte (Max) @ 25ns  
– Standby: 15 mW (Typ)  
Wide Temperature Range: -55 to +125°C  
TTL-Compatible Inputs and Outputs  
Rad Hard  
Asynchronous  
Die manufactured on Atmel 0.25 µm Radiation Hardened Process  
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2  
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019  
950 Mils Wide MQFPT 68 Package  
16 MegaBit  
SRAM Multi  
Chip Module  
ESD Better than 4000V for the AT68166F  
ESD Better than 2000V for the AT68166FT  
Quality Grades: ESCC, QML-Q or V  
Description  
AT68166F  
AT68166FT  
The AT68166F/FT is a Radiation Hardened hermetic Multi Chip Modules (MCM), inte-  
grating very low-power CMOS asynchronous static RAM which can be organized as 1  
bank off 512K x 32, 2 banks off 512Kx16, or 4 banks off 512Kx8. It is built with 4 dies  
of the AT60142F/FT SRAM keeping all their basic characteristics: power consump-  
tion, stand by current, data retention, Multiple Bit Upset (MBU) immune, etc…  
This MCM takes full benefit of Atmel expertise in hermetic ceramic package assembly.  
The small size of the AT60142F/FT die allows for assembling it in a 68 pins quad flat  
pack which results into a package footprint compatible with products from other  
sources. Furthermore, all die being assembled on the same package side makes  
power dissipation through the PCB much easier and more efficient.  
Advanced  
Information  
This MCM brings the solution to applications where fast computing is as mandatory as  
low power consumption and higher integration density, saving 75% of the PCB area  
used when using the individually package 4MB SRAM.  
The F version is biased at 3.3V and is not 5V tolerant. It is available in 15 ns  
specification.  
The FT version is a variant allowing for 5V tolerance. It is available in 25 ns and 17 ns  
specification.  
The AT68166F/FT will be processed according to the test methods of the latest revi-  
sion of the MIL PRF-38535 or the ESCC 9000.  
7531B–AERO–02/06  

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