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AT68166F-YM20ESCC

更新时间： 2024-11-27 21:10:19
品牌 Logo 应用领域
爱特美尔 - ATMEL 静态存储器内存集成电路
页数 文件大小 规格书
20页 336K
描述
Standard SRAM, 512KX32, 20ns, CMOS, CQFP68, 0.950 INCH, CERAMIC, MQFP-68

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AT68166F-YM20ESCC 技术参数

生命周期：Transferred零件包装代码：QFP
包装说明：QFF,针数：68
Reach Compliance Code：compliantECCN代码：3A001.A.2.C
HTS代码：8542.32.00.41风险等级：5.21
最长访问时间：20 ns其他特性：IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO
JESD-30 代码：S-CQFP-F68长度：24.13 mm
内存密度：16777216 bit内存集成电路类型：STANDARD SRAM
内存宽度：32功能数量：1
端子数量：68字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：125 °C最低工作温度：-55 °C
组织：512KX32封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：QFF封装形状：SQUARE
封装形式：FLATPACK并行/串行：PARALLEL
认证状态：Not Qualified座面最大高度：4.7 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：MILITARY
端子形式：FLAT端子节距：1.27 mm
端子位置：QUAD宽度：24.13 mm
Base Number Matches：1

AT68166F-YM20ESCC 数据手册

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Features  
•
•
•
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16 Mbit SRAM Multi Chip Module  
Allows 32-, 16- or 8-bit access configuration  
Operating Voltage: 3.3V + 0.3V  
Access Time:  
– AT68166FT (5V Tolerant)  
. 25 ns  
. 20 ns (preliminary information)  
– AT68166F  
. 20 ns  
. 18 ns (preliminary information)  
Very Low Power Consumption  
– AT68166FT (5V Tolerant)  
Rad Hard  
•
16 MegaBit  
SRAM Multi  
Chip Module  
. Active: 540 mW per byte (Max) @ 25 ns - 450 mW per byte (Max) @ 50ns  
. Standby: 15 mW (Typ)  
– AT68166F  
. Active: 620 mW per byte (Max) @ 20 ns - 450 mW per byte (Max) @ 50ns  
. Standby: 15 mW (Typ)  
•
•
•
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Military Temperature Range: -55 to +125°C  
TTL-Compatible Inputs and Outputs  
Asynchronous  
AT68166F  
Die manufactured on Atmel 0.25 µm Radiation Hardened Process  
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2  
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019  
ESD Better than 4000V for the AT68166F  
ESD Better than 2000V for the AT68166FT  
Quality Grades:  
AT68166FT  
– QML-Q or V with SMD 5962-06229  
– ESCC  
•
•
950 Mils Wide MQFPT 68 Package  
Mass : 8.5 grams  
Description  
The AT68166F/FT is a 16 Mbit Radiation Hardened hermetic Multi Chip Module  
(MCM), made of very low-power CMOS asynchronous static RAM which can be orga-  
nized as 1 bank of 512K x 32, 2 banks of 512Kx16, or 4 banks of 512Kx8. It is built  
with 4 dice of the AT60142F/FT SRAM keeping all their basic characteristics: power  
consumption, stand by current, data retention, Multiple Bit Upset (MBU) immunity, etc.  
This MCM takes full benefit of Atmel expertise in hermetic ceramic package assembly.  
The small size of the AT60142F/FT die allows for assembling it in a 68 pins quad flat  
pack which results into a package footprint compatible with products from other  
sources. Furthermore, all dice being assembled on the same package side makes  
power dissipation through the PCB much easier and more efficient.  
This MCM brings the solution to applications where fast computing is as mandatory as  
low power consumption and higher integration density, saving 75% of the PCB area  
used when using the individually packaged 4 Mbit SRAM.  
AT68166F and AT68166FT power supply is 3.3V. AT68166FT is 5V tolerant while  
AT68166F is not.  
The AT68166F/FT are processed according to the test methods of the latest revision  
of the MIL-PRF-38535 or the ESCC 9000.  
7531F–AERO–04/07  
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