Datasheet > AT68166HT-YM25SV

AT68166HT-YM25SV

更新时间： 2024-11-27 06:38:23

品牌	Logo	应用领域
爱特美尔 - ATMEL		静态存储器
页数	文件大小	规格书
15页	340K
描述
Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT68166HT-YM25SV 数据手册

Features

• 16 Mbit SRAM Multi Chip Module

• Allows 32-, 16- or 8-bit access configuration

• Operating Voltage: 3.3V + 0.3V, 5V Tolerant

• Access Time:

– 25 ns

– 20 ns

– 18 ns (preliminary information)

• Very Low Power Consumption

– Active: 595 mW per byte (Max) @ 20 ns⁽¹⁾, 415mW per byte (Max) @ 50ns⁽²⁾

– Standby: 15 mW (Typ)

• Military Temperature Range: -55 to +125°C

• TTL-Compatible Inputs and Outputs

• Asynchronous

• Die manufactured on Atmel 0.25 µm Radiation Hardened Process

• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm²@125°C

• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019

• ESD better than 2000V

Rad Hard

16 MegaBit 3.3V

5V Tolerant

SRAM Multi-

Chip Module

• Quality Grades:

– QML-Q or V

– ESCC

• 950 Mils Wide MQFPT68 Package

• Mass : 8.5 grams

AT68166HT

Notes: 1. For AT68166HT-20 only. 540mW for AT68166HT-25.

2. For AT68166HT-20 only. 450mW for AT68166HT-25.

Description

The AT68166HT is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM)

for space applications.

The AT68166HT MCM incorporates four 4Mbit AT60142HT SRAM dice. It can be

organized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of

512Kx8. It combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a

Multiple Bit Upset immunity and a total dose tolerance of 300Krads, with a fast access

time.

The MCM packaging technology allows a reduction of the PCB area by 50% with a

weight savings of 75% compared to four 4Mbit packages.

Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-

date the assembly of the four dice on one side of the package which facilitates the

power dissipation.

The compatibility with other products allows designers to easily migrate to the Atmel

AT68166HT memory.

The AT68166HT is powered at 3.3V and is 5V tolerant.

The AT68166HT is processed according to the test methods of the latest revision of

the MIL-PRF-38535 or the ESCC 9000.

7843A–AERO–10/09

12 3 4 5 6 7...15

中文翻译

下载PDF

与AT68166HT-YM25SV相关器件

型号	品牌	获取价格	描述	数据表
AT68166HT-YS18-E	ATMEL	获取价格	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module
AT68166HT-YS18-MQ	ATMEL	获取价格	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module
AT68166HT-YS18-SCC	ATMEL	获取价格	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module
AT68166HT-YS18-SR	ATMEL	获取价格	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module
AT68166HT-YS18-SV	ATMEL	获取价格	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module
AT68166HT-YS20-E	ATMEL	获取价格	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module
AT68166HT-YS20MQ	ATMEL	获取价格	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module
AT68166HT-YS20-SCC	ATMEL	获取价格	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module
AT68166HT-YS20SR	ATMEL	获取价格	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module
AT68166HT-YS20SV	ATMEL	获取价格	Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module

与AT68166HT-YM25SV相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

47
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

AT68166HT-YM25SV

AT68166HT-YM25SV 数据手册

与AT68166HT-YM25SV相关器件

与AT68166HT-YM25SV相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AT68166HT-YM25SV

AT68166HT-YM25SV 数据手册

与AT68166HT-YM25SV相关器件

与AT68166HT-YM25SV相关文章

您还可以找

您在本页遇到什么问题？