Datasheet > AT28BV256_09

AT28BV256_09

更新时间： 2024-11-28 06:38:19

品牌	Logo	应用领域
爱特美尔 - ATMEL		电池可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
17页	286K
描述
256K (32K x 8) Battery-Voltage Parallel EEPROMs

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数据手册

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AT28BV256_09 数据手册

Features

• Single 2.7V - 3.6V Supply

• Fast Read Access Time – 200 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

• Fast Write Cycle Times

– Page Write Cycle Time: 10 ms Maximum

– 1- to 64-byte Page Write Operation

• Low Power Dissipation

256K (32K x 8)

Battery-Voltage

Parallel

– 15 mA Active Current

– 20 µA CMOS Standby Current

• Hardware and Software Data Protection

• Data Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 10,000 Cycles

EEPROMs

– Data Retention: 10 Years

• JEDEC Approved Byte-wide Pinout

• Industrial Temperature Ranges

• Green (Pb/Halide-free) Packaging Option Only

AT28BV256

1. Description

The AT28BV256 is a high-performance electrically erasable and programmable read-

only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-

tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access

times to 200 ns with power dissipation of just 54 mW. When the device is deselected,

the CMOS standby current is less than 200 µA.

The AT28BV256 is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 64-byte page register to allow

writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to

64 bytes of data are internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the device will automatically write

the latched data using an internal control timer. The end of a write cycle can be

detected by Data polling of I/O7. Once the end of a write cycle has been detected a

new access for a read or write can begin.

Atmel’s AT28BV256 has additional features to ensure high quality and manufactura-

bility. The device utilizes internal error correction for extended endurance and

improved data retention characteristics. An optional software data protection mecha-

nism is available to guard against inadvertent writes. The device also includes an

extra 64 bytes of EEPROM for device identification or tracking.

0273K–PEEPR–2/09

12 3 4 5 6 7...17

中文翻译

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与AT28BV256_09相关器件

型号	品牌	获取价格	描述	数据表
AT28BV256-20	ATMEL	获取价格	256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV256-20JC	ETC	获取价格	x8 EEPROM
AT28BV256-20JI	ATMEL	获取价格	256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV256-20JJ	MICROCHIP	获取价格	EEPROM, 32KX8, 200ns, Parallel, CMOS, PQCC32
AT28BV256-20JU	ATMEL	获取价格	256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV256-20JU	MICROCHIP	获取价格	IC EEPROM 256KBIT 200NS 32PLCC
AT28BV256-20JU-T	MICROCHIP	获取价格	IC EEPROM 256KBIT 200NS 32PLCC
AT28BV256-20PC	ATMEL	获取价格	EEPROM, 32KX8, 200ns, Parallel, CMOS, PDIP28, 0.600 INCH, PLASTIC, MS-011AB, DIP-28
AT28BV256-20PI	ATMEL	获取价格	256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV256-20PJ	ATMEL	获取价格	EEPROM, 32KX8, 200ns, Parallel, CMOS, PDIP28, 0.600 INCH, PLASTIC, MS-011AB, DIP-28

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