Datasheet > AT28BV256-20SC

AT28BV256-20SC

更新时间： 2024-11-28 23:32:23

品牌	Logo	应用领域
其他 - ETC		内存集成电路光电二极管异步传输模式 ATM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	279K
描述
x8 EEPROM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT28BV256-20SC 数据手册

Features

• Single 2.7V - 3.6V Supply

• Fast Read Access Time – 200 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

• Fast Write Cycle Times

– Page Write Cycle Time: 10 ms Maximum

– 1- to 64-byte Page Write Operation

• Low Power Dissipation

– 15 mA Active Current

256K (32K x 8)

Battery-Voltage^™

Parallel

– 20 µA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 10,000 Cycles

– Data Retention: 10 Years

• JEDEC Approved Byte-wide Pinout

• Commercial and Industrial Temperature Ranges

EEPROMs

Description

AT28BV256

The AT28BV256 is a high-performance Electrically Erasable and Programmable Read

Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-

tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access

times to 200 ns with power dissipation of just 54 mW. When the device is deselected,

the CMOS standby current is less than 200 µA.

(continued)

Pin Configurations

PDIP, SOIC

Top View

Pin Name

A0 - A14

Function

Addresses

A14

A12

VCC

A13

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

A11

A10

I/O0 - I/O7

I/O7

I/O6

I/O5

I/O4

I/O3

I/O0

I/O1

I/O2

GND

Don’t Connect

PLCC

Top View

TSOP

Top View

A11

A10

29 A8

28 A9

27 A11

26 NC

25 OE

24 A10

23 CE

22 I/O7

21 I/O6

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

A13

VCC

A14

A12

A1 10

A0 11

NC 12

I/O0 13

Rev. 0273G–11/99

Note: PLCC package pins 1 and 17

are DON’T CONNECT.

12 3 4 5 6 7...12

中文翻译

下载PDF

与AT28BV256-20SC相关器件

型号	品牌	获取价格	描述	数据表
AT28BV256-20SI	ATMEL	获取价格	256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV256-20SJ	MICROCHIP	获取价格	EEPROM, 32KX8, 200ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, MS-013, SOIC-28
AT28BV256-20SU	MICROCHIP	获取价格	IC EEPROM 256KBIT 200NS 28SOIC
AT28BV256-20SU	ATMEL	获取价格	256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV256-20SU-T	MICROCHIP	获取价格	200NS, SOIC, IND TEMP, GREEN
AT28BV256-20TC	ETC	获取价格	x8 EEPROM
AT28BV256-20TI	ATMEL	获取价格	256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV256-20TU	ATMEL	获取价格	256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV256-20TU	MICROCHIP	获取价格	IC EEPROM 256KBIT 200NS 28TSOP
AT28BV256-20TU-235	MICROCHIP	获取价格	IC EEPROM 256KBIT 200NS 28TSOP