AT28BV256-20SI PDF预览

AT28BV256-20SI

更新时间: 2025-09-22 19:20:19
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储
页数 文件大小 规格书
16页 251K
描述
存储容量(Mb):256Kb(32K x 8);内存数据长度(bit):32K ;字编码数(k):32K ;元器件封装:28-SOIC;

AT28BV256-20SI 数据手册

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Features  
Single 2.7V - 3.6V Supply  
Fast Read Access Time – 200 ns  
Automatic Page Write Operation  
– Internal Address and Data Latches for 64 Bytes  
– Internal Control Timer  
Fast Write Cycle Times  
– Page Write Cycle Time: 10 ms Maximum  
– 1- to 64-byte Page Write Operation  
Low Power Dissipation  
– 15 mA Active Current  
256K (32K x 8)  
Battery-Voltage  
Parallel  
– 20 µA CMOS Standby Current  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
– Endurance: 10,000 Cycles  
– Data Retention: 10 Years  
JEDEC Approved Byte-wide Pinout  
EEPROMs  
Commercial and Industrial Temperature Ranges  
Description  
AT28BV256  
The AT28BV256 is a high-performance Electrically Erasable and Programmable Read  
Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-  
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access  
times to 200 ns with power dissipation of just 54 mW. When the device is deselected,  
the CMOS standby current is less than 200 µA.  
PDIP, SOIC – Top View  
Pin Configurations  
A14  
A12  
A7  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VCC  
WE  
A13  
A8  
Pin Name  
A0 - A14  
CE  
Function  
2
3
Addresses  
A6  
4
A5  
5
A9  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
A4  
6
A11  
OE  
A3  
7
OE  
A2  
8
A10  
CE  
A1  
9
A0  
10  
11  
12  
13  
14  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
WE  
I/O0  
I/O1  
I/O2  
GND  
I/O0 - I/O7  
NC  
DC  
Don’t Connect  
Note:  
1. Note: PLCC package pins 1 and 17  
are DON’T CONNECT.  
PLCC – Top View  
TSOP – Top View  
OE  
A11  
A9  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
A10  
CE  
A6  
A5  
A4  
A3  
A2  
5
6
7
8
9
29 A8  
28 A9  
27 A11  
26 NC  
25 OE  
24 A10  
23 CE  
22 I/O7  
21 I/O6  
2
3
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
A8  
4
A13  
WE  
5
6
VCC  
A14  
A12  
A7  
7
A1 10  
A0 11  
8
9
NC 12  
I/O0 13  
10  
11  
12  
13  
14  
A6  
A5  
A4  
A1  
A3  
A2  
0273H–PEEPR–10/04  

AT28BV256-20SI 替代型号

型号 品牌 替代类型 描述 数据表
AT28BV256-20SU MICROCHIP

完全替代

IC EEPROM 256KBIT 200NS 28SOIC

与AT28BV256-20SI相关器件

型号 品牌 获取价格 描述 数据表
AT28BV256-20SJ MICROCHIP

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EEPROM, 32KX8, 200ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, MS-013, SOIC-28
AT28BV256-20SU ATMEL

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256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV256-20SU MICROCHIP

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IC EEPROM 256KBIT 200NS 28SOIC
AT28BV256-20SU-T MICROCHIP

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200NS, SOIC, IND TEMP, GREEN
AT28BV256-20TA MICROCHIP

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存储容量(Mb):256Kb(32K x 8);内存数据长度(bit):32K ;字编码数
AT28BV256-20TC ETC

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x8 EEPROM
AT28BV256-20TC MICROCHIP

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存储容量(Mb):256Kb(32K x 8);内存数据长度(bit):32K ;字编码数
AT28BV256-20TI ATMEL

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256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV256-20TI MICROCHIP

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存储容量(Mb):256Kb(32K x 8);内存数据长度(bit):32K ;字编码数
AT28BV256-20TU ATMEL

获取价格

256K (32K x 8) Battery-Voltage Parallel EEPROMs