Datasheet > ASIMRF315A

ASIMRF315A

更新时间： 2024-11-14 22:39:15

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	17K
描述
NPN SILICON RF POWER TRANSISTOR

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ASIMRF315A 数据手册

MRF315A

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI MRF315A is Designed for

Class C Power Amplifier Applications

up to 200 MHz.

PACKAGE STYLE .380 4L STUD

.112x45°

FEATURES:

• P_G= 9.0 dB min. at 45 W/ 150 MHz

• Withstands 30:1 Load VSWR

• Omnigold™ Metalization System

ØC

MAXIMUM RATINGS

#8-32 UNC-2A

5.0 A

65 V

I_C

V_CBO

V_CEO

V_EBO

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

35 V

.220 / 5.59

.980 / 24.89

.370 / 9.40

.004 / 0.10

.320 / 8.13

.100 / 2.54

.450 / 11.43

.090 / 2.29

.155 / 3.94

.230 / 5.84

4.0 V

.385 / 9.78

.007 / 0.18

.330 / 8.38

.130 / 3.30

.490 / 12.45

.100 / 2.54

.175 / 4.45

.750 / 19.05

75 W

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

2.3 ^OC/W

T_STG

θ_JC

ORDER CODE: ASI10757

CHARACTERISTICS ^T_C= 25 ^O

SYMBOL

BV_CEO

NONETEST CONDITIONS

I_C= 200 mA

MINIMUM TYPICAL MAXIMUM UNITS

4.0

I_C= 200 mA

I_C= 10 mA

I_E= 10 mA

V_CB= 30 V

V_CE= 5.0 V

BV_CES

BV_CBO

BV_EBO

I_CBO

4.0

---

I_C= 500 mA

P_OUT= 45 W

5.0

200

h_FE

V_CB= 30 V

f = 1.0 MHz

f = 150 MHz

C_ob

9.0

P_G

η_C

V_CE= 28 V

30:1 minimum without degration in output power

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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