Datasheet > ASIPT9701

ASIPT9701

更新时间： 2024-10-31 22:33:43

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	21K
描述
NPN SILICON RF POWER TRANSISTOR

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ASIPT9701 数据手册

PT9701

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI PT9701 is a Common

Emitter Device Designed for Class A ,

AB and C Amplifier Applications in the

225 - 400 MHz Military

PACKAGE STYLE .280 4L STUD

Communications Band.

FEATURES INCLUDE:

• Gold Metalization

• Emitter Ballasting

• High Gain

MAXIMUM RATINGS

1.25 A

45 V

I_C

V_CES

P_DISS

T_J

14 W @ T_C= 25 °C

-55 °C to +200 °C

12 °C/W

T_STG

θ_JC

1 = COLLECTOR

2 = BASE

3 & 4 = EMITTER

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

BV_CES

BV_EBO

h_FE

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 20 mA

I_C= 10 mA

I_E= 1.0 mA

3.5

V_CE= 5.0 V

I_C= 200 mA

P_out= 5.0 W

---

C_ob

V_CB= 28 V

f = 1.0 MHz

f = 400 MHz

7.0

P_G

η_C

V_CE= 28 V

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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