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ASIPT9704 PDF预览

ASIPT9704

更新时间: 2024-10-31 22:33:43
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 16K
描述
NPN SILICON RF POWER TRANSISTOR

ASIPT9704 数据手册

  
PT9704  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI PT9704 is Designed for  
wideband, large-signal amplifier  
Applications up to 500 MHz.  
PACKAGE STYLE .280" 4L STUD  
A
45°  
C
E
B
E
FEATURES INCLUDE:  
Gold Metalization  
B
C
Diffused Ballast Resistors  
Common Emitter  
D
J
E
I
F
G
MAXIMUM RATINGS  
H
K
#8-32 UNC  
5.0 A  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
IC  
DIM  
1.010 / 25.65  
.220 / 5.59  
.270 / 6.86  
.003 / 0.08  
.117 / 2.97  
1.055 / 26.80  
.230 /5.84  
.285 / 7.24  
.007 / 0.18  
.137 / 3.48  
A
B
C
D
E
F
G
H
I
30 V  
VCE  
PDISS  
TJ  
70 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
2.5 °C/W  
.572 / 14.53  
.130 / 3.30  
.245 / 6.22  
.255 / 6.48  
TSTG  
θJC  
.640 / 16.26  
.175 / 4.45  
.275 / 6.99  
.217 / 5.51  
.285 / 7.24  
J
K
CHARACTERISTICS TC = 25 O  
C
SYMBOL  
BVCEO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 30 mA  
IC = 30 mA  
IE = 3.0 mA  
30  
V
60  
BVCES  
BVEBO  
ICBO  
V
4.0  
V
VCB = 30 V  
3.0  
mA  
---  
IC = 100 mA  
VCE = 5.0 V  
POUT = 30 W  
10  
150  
hFE  
VCB = 28 V  
f = 1.0 MHz  
f = 400 MHz  
36  
Cob  
pF  
7.0  
60  
GPE  
dB  
%
VCE = 28 V  
η
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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