Datasheet > ASIMRF460

ASIMRF460

更新时间： 2024-11-14 21:55:39

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	22K
描述
NPN SILICON RF POWER TRANSISTOR

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ASIMRF460 数据手册

MRF460

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI MRF460 is Designed for

12.5 Volt Power Amplifier Applications

up to 30 MHz.

FEATURES INCLUDE:

• Omnigold™ Metalization System

• P_G= 12 dB Min. @ 30 MHz & 40 W

• Efficiency 40%

PACKAGE STYLE .500" 4L FLANGE

MAXIMUM RATINGS

215 A

40 V

I_C

V_CBO

V_CEO

V_EBO

P_DISS

T_J

20 V

4.0 V

175 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

1.0 °C/W

T_STG

θ_JC

1 = COLLECTOR

2 = BASE

3 & 4 = EMITTER

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CES

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 100 mA

I_E= 5.0 mA

BV_CEO

BV_EBO

I_CES

4.0

_CE= 12.5 V

V_CE= 5.0 V

_CB= 12.5 V

350

-30

---

I_C= 1.0 A

I_C= 4.7 A

h_FE

f = 1.0 MHz

300

C_OB

G_PE

V_CC= 12.5 V

f = 30 MHz

P_OUT= 40 W(PEP)

-35

IMD

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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