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ASIMV1807J1 PDF预览

ASIMV1807J1

更新时间: 2024-11-14 22:06:47
品牌 Logo 应用领域
ASI 二极管变容二极管
页数 文件大小 规格书
1页 31K
描述
SILICON VARACTOR DIODE

ASIMV1807J1 数据手册

  
MV1807J1  
SILICON VARACTOR DIODE  
DESCRIPTION:  
PACKAGE STYLE DO-4  
The ASI MV1807J1 is a Diffused  
Epitaxial Varactor Diode Designed for  
Multiplier Applications.  
MAXIMUM RATINGS  
100 mA  
I
80 V  
V
21 W @ TC = 25 OC  
-65 OC to +150 OC  
-65 OC to +175 OC  
6.0 OC/W  
PDISS  
TJ  
TSTG  
θJC  
Cathode to case  
CHARACTERISTICS TC = 25 O  
C
NONE  
SYMBOL  
VB  
TEST CONDITIONS  
MINIMUM  
TYPICAL MAXIMUM  
UNITS  
V
IR = 10 µA  
VR = 6.0 V  
VR = 6.0 V  
80  
CT  
RS  
f = 1.0 MHz  
f = 50 MHz  
10.8  
13.2  
pF  
Ohms  
MHz  
W
0.25  
FOUT  
POUT  
FIN  
1000  
25.1  
500  
MHz  
W
PIN  
37.0  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

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