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ASIMV1863D

更新时间: 2024-11-14 22:33:43
品牌 Logo 应用领域
ASI 二极管变容二极管
页数 文件大小 规格书
1页 18K
描述
SILICON ABRUPT TUNING VARACTOR DIODE

ASIMV1863D 数据手册

  
MV1863D  
SILICON ABRUPT TUNING VARACTOR DIODE  
DESCRIPTION:  
PACKAGE STYLE 31  
The ASI MV1863D is a Passivated  
Epitaxial Silicon Abrupt Tuning  
Varactor Diode.  
MAXIMUM RATINGS  
I
100 mA  
V
60 V  
PDISS  
TJ  
500 mW @ TC = 25 OC  
-65 OC to +175 OC  
-65 OC to +200 OC  
0.3 OC/W  
TSTG  
θJC  
CHARACTERISTICS TC = 25 O  
C
NONE  
SYMBOL  
VB  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IR = 10 µA  
VR = 55 V  
60  
V
IR  
CT  
TR  
RS  
Q
100  
5.17  
3.3  
µA  
VR = 4.0 V  
C = -4/C = -60  
VR = 4.0 V  
VR = 4.0 V  
f = 1.0 MHz  
f = 1.0 MHz  
f = 500 MHz  
f = 100 MHz  
f = 1.0 MHz  
4.23  
2.6  
4.70  
pF  
RATIO  
Ohms  
---  
1.1  
300  
Cp  
Ls  
0.18  
0.8  
pF  
µH  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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SILICON ABRUPT VARACTOR DIODE