Datasheet > ASIMRF427

ASIMRF427

更新时间： 2024-11-14 22:39:15

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	16K
描述
NPN SILICON RF POWER TRANSISTOR

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中文翻译

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数据手册

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ASIMRF427 数据手册

MRF427

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI MRF427 is Designed for

high voltage applications up to 30 MHz

PACKAGE STYLE .500 4L FLG

.112x45°

FEATURES:

Ø.125 NOM.

FULL R

• P_G= 18 dB min. at 25 W/30 MHz

• IMD₃= -34 dBc max. at 25 W^(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

I_C

6.0 A

110 V

.220 / 5.59

.230 / 5.84

V_CBO

V_CEO

V_EBO

P_DISS

T_J

.125 / 3.18

.245 / 6.22

.255 / 6.48

65 V

.720 / 18.28

.7.30 / 18.54

.970 / 24.64

.495 / 12.57

.003 / 0.08

.090 / 2.29

.150 / 3.81

.980 / 24.89

.505 / 12.83

.007 / 0.18

.110 / 2.79

.175 / 4.45

.280 / 7.11

1.050 / 26.67

4.0 V

80 W @ T_C= 25 °C

-65 ^OC to +200 °C

-65 ^OC to +150 °C

2.19 °C/W

.980 / 24.89

T_STG

θ_JC

ORDER CODE: ASI10467

CHARACTERISTICS ^T_C= 25 ^°C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 100 mA

I_C= 200 mA

I_E= 10 mA

V_CE= 5.0 V

110

BV_CES

BV_CEO

BV_EBO

h_FE

4.0

I_C= 500 mA

---

C_ob

V_CB= 50 V

f = 1.0 MHz

f = 30 MHz

G_P

V_CE= 50 V

P_OUT= 25 W (PEP)

-34

IMD₃

dBc

- 37

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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