Datasheet > ASI1N23WG

ASI1N23WG

更新时间： 2024-11-13 22:33:51

品牌	Logo	应用领域
ASI		二极管
页数	文件大小	规格书
1页	19K
描述
SILICON MIXER DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ASI1N23WG 数据手册

1N23WG

SILICON MIXER DIODE

DESCRIPTION:

PACKAGE STYLE DO- 23

The ASI 1N23WG is a Silicon Mixer

Diode Designed for Applications

Operating From 8.0 to 12.4 GHz.

FEATURES:

• High burnout resistance

• Low noise figure

• Hermetically sealed package

• Matched pairs available by adding

suffix “M” or “MR” for matched forward

and reverse

MAXIMUM RATINGS

I_F

V_R

20 mA

1.0 V

P_DISS

T_J

2.0 ^(ERGS)@ T_C= 25 °C

-55 °C to +150 °C

T_STG

NONE

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIM

UNITS

F = 9375 MHz

R_L= 100 Ω

P_lo= 1.0 mW

I_F= 30 MHz

N_Fif= 1.5 dB

f = 1000 Hz

6.5

V_SWR

Z_IF

1.3

R_L= 22 Ω

335

8.0

465

Ω

frange

12.4

GHz

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

中文翻译

下载PDF

与ASI1N23WG相关器件

型号	品牌	获取价格	描述	数据表
ASI1N253	ASI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon, DO-4
ASI1N415E	ASI	获取价格	SILICON MIXER DIODE
ASI2001	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
ASI2001_07	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
ASI2003	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
ASI2003_07	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
ASI2005	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
ASI2010	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
ASI2223-12	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
ASI2223-20	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR