ASI3003

更新时间： 2024-11-14 22:39:15

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	21K
描述
NPN SILICON RF POWER TRANSISTOR

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ASI3003 数据手册

ASI3003

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .250 2L FLG

The ASI 3003 is Designed for General

Purpose Class C Power Amplifier

Applications up to 3500 MHz.

ØD

.060 x 45°

CHAMFER

FEATURES:

· P_G= 5 dB min. at 3 W / 3,000 MHz

· Hermetic Microstrip Package

· Omnigold™ Metalization System

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.028 / 0.71

.740 / 18.80

.245 / 6.22

.128 / 3.25

.032 / 0.81

MAXIMUM RATINGS

.255 / 6.48

.132 / 3.35

20 mA

I_C

.125 / 3.18

.117 / 2.97

.110 / 2.79

.117 / 2.97

30 V

V_CC

P_DISS

T_J

.560 / 14.22

.790 / 20.07

.225 / 5.72

.165 / 4.19

.003 / 0.08

.058 / 1.47

.119 / 3.02

.149 / 3.78

.570 / 14.48

.810 / 20.57

.235 / 5.97

.185 / 4.70

.007 / 0.18

.068 / 1.73

.135 / 3.43

.187 / 4.75

6.0 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

15 ^OC/W

T_STG

q_JC

ORDER CODE: ASI10539

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 1 mA

I_C= 5 mA

I_E= 10 mA

V_CB= 28 V

V_CE= 5.0 V

BV_CER

BV_EBO

I_CBO

R_BE= 10 W

I_C= 200 mA

P_OUT= 3.0 W

3.5

0.5

---

h_FE

300

C_OB

V_CB= 28 V

V_CC= 28 V

f = 1.0 MHz

f = 3.0 GHz

5.0

P_G

5.0

h_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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