Datasheet > ASI2N3866

ASI2N3866

更新时间： 2024-11-13 22:33:51

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描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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ASI2N3866 数据手册

2N3866

NPN SILICON HIGH FREQUENCY TRANSISTOR

PACKAGE STYLE TO-39

DESCRIPTION:

The ASI 2N3866 is a High

Frequency Transistor Designed for

Amplifier and Oscillator Applications.

MAXIMUM RATINGS

400 mA

I_C

V_CE

P_DISS

T_J

30 V

5.0 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

35 ^OC/W

T_STG

θ_JC

1 = Emitter

2 = Base

3 = Collector

CHARACTERISTICS ^T_C= 25 ^O

NONE

SYMBOL

BV_CEO

TEST CONDITIONS

MINIMUM

TYPICAL MAXIMUM

UNITS

I_C= 5.0 mA

I_C= 100 µA

BV_CER

BV_EBO

R_BE= 10 Ω

3.5

_CE= 55 V

V_BE= -1.5 V

100

500

I_CEX

T_C= 200 ^OC

µA

V_CE= 30 V

V_CE= 28 V

V_EB= 3.5 V

V_BE= -1.5 V

I_CEO

I_EBO

µA

100

200

V_CE= 5.0 V

I_C= 50 mA

I_C= 360 mA

I_B= 20 mA

h_FE

---

5.0

V_CE(SAT)

I_C= 100 mA

1.0

3.0

f_t

V_CE= 15 V

V_CB= 28 V

I_C= 50 mA

f = 200 MHz

f = 1.0 MHz

500

MHz

C_OB

G_PE

V_CC= 28 V

P_out= 1.0 W

f = 400 MHz

η_c

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

Specifications are subject to change without notice.

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