Datasheet > ASI2223-4_07

ASI2223-4_07

更新时间： 2022-10-11 12:06:40

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	61K
描述
NPN SILICON RF POWER TRANSISTOR

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ASI2223-4_07 数据手册

ASI2223-4

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .400 2NL FLG

.025 x 45°

The ASI 2223-4 is Designed for

General Purpose Clacc C Applications

up to 2.3 GHz.

4x .062 x 45°

ØD

FEATURES:

• Internal Input/Output Matching Networks

• P_G= 8.0 dB at 4.0 W/2.3 GHz

• Omnigold™ Metalization System

MINIMUM

inches mm

MAXIMUM

inches mm

DIM

.020 / 0.51

.100 / 2.54

.376 / 9.55

.110 / 2.79

.395 / 10.03

.030 / 0.76

MAXIMUM RATINGS

.396 / 10.06

.130 / 3.30

.407 / 10.34

0.75 A

26 V

I_C

V_CC

P_DISS

T_J

.193 / 4.90

.450 / 11.43

.125 / 3.18

.640 / 16.26

.890 / 22.61

.395 / 10.03

.004 / 0.10

.052 / 1.32

.118 / 3.00

.660 / 16.76

.910 / 23.11

.415 / 10.54

.007 / 0.18

.072 / 1.83

.131 / 3.33

.230 / 5.84

15.9 W @ T_C= 25 °C

-65 °C to +200 °C

11.0 °C/W

T_STG

θ_JC

ORDER CODE: ASI10531

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 5.0 mA

I_C= 10 mA

I_E= 1.0 mA

BV_CER

BV_EBO

I_CBO

R_BE= 10 Ω

3.5

_CB= 22 V

_CE= 5.0 V

1.0

---

I_C= 500 mA

P_OUT= 4.0 W

100

h_FE

8.0

P_G

V_CC= 22 V

f = 2.2 – 2.3 GHz

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/2

Specifications are subject to change without notice.

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