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AS7C33256NTF36A-65TQIN PDF预览

AS7C33256NTF36A-65TQIN

更新时间: 2024-12-02 03:01:31
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器
页数 文件大小 规格书
14页 307K
描述
ZBT SRAM, 256KX36, 6.5ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100

AS7C33256NTF36A-65TQIN 数据手册

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AS7C33256NTF32A  
AS7C33256NTF36A  
July 2004  
®
3.3V 256K×32/36 Flowthrough Synchronous SRAM with NTDTM  
Features  
• Organization: 262,144 words × 32 or 36 bits  
• NTD™1 architecture for efficient bus operation  
• Fast clock to data access: 6.5/7.5 ns  
• Fast OE access time: 3.5 ns  
• Available in 100-pin TQFP  
• Byte write enables  
• Clock enable for operation hold  
• Multiple chip enables for easy expansion  
• 3.3 core power supply  
• Fully synchronous operation  
• Flow-through mode  
• Asynchronous output enable control  
• 2.5V or 3.3V I/O operation with separate VDDQ  
• 30 mW typical standby power  
• Self-timed write cycles  
• Interleaved or linear burst modes  
• Snooze mode for standby operation  
1. NTD is a trademark of Alliance Semiconductor Corporation. All  
trademarks mentioned in this document are the property of their respective  
owners.  
Logic Block Diagram  
18  
18  
Q
A[17:0]  
D
Address  
register  
Burst logic  
CLK  
D
Q
CE0  
CE1  
CE2  
Write delay  
addr. registers  
CLK  
18  
R/W  
BWa  
Control  
logic  
CLK  
BWb  
BWc  
BWd  
ADV / LD  
LBO  
256K x 32/36  
SRAM  
ZZ  
CLK  
Array  
32/36  
32/36  
DQ[a,b,c,d]  
Data  
Input  
Register  
D
Q
32/36  
32/36  
CLK  
32/36  
CLK  
CEN  
Output  
Buffer  
OE  
32/36  
OE  
DQ[a,b,c,d]  
Selection Guide  
–65  
7.5  
6.5  
250  
120  
30  
-75  
8.5  
7.5  
225  
100  
30  
Units  
ns  
Minimum cycle time  
Maximum clock access time  
Maximum operating current  
Maximum standby current  
ns  
mA  
mA  
mA  
Maximum CMOS standby current (DC)  
7/12/04, v. 1.0  
Alliance Semiconductor  
P. 1 of 14  
Copyright © Alliance Semiconductor. All rights reserved.  

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