5秒后页面跳转
AS7C331MNTD18A-100TQC PDF预览

AS7C331MNTD18A-100TQC

更新时间: 2024-11-02 15:27:59
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
19页 368K
描述
ZBT SRAM, 1MX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

AS7C331MNTD18A-100TQC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.74
最长访问时间:8.5 ns其他特性:FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
长度:20 mm内存密度:18874368 bit
内存集成电路类型:ZBT SRAM内存宽度:18
功能数量:1端子数量:100
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX18
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:14 mm

AS7C331MNTD18A-100TQC 数据手册

 浏览型号AS7C331MNTD18A-100TQC的Datasheet PDF文件第2页浏览型号AS7C331MNTD18A-100TQC的Datasheet PDF文件第3页浏览型号AS7C331MNTD18A-100TQC的Datasheet PDF文件第4页浏览型号AS7C331MNTD18A-100TQC的Datasheet PDF文件第5页浏览型号AS7C331MNTD18A-100TQC的Datasheet PDF文件第6页浏览型号AS7C331MNTD18A-100TQC的Datasheet PDF文件第7页 
June 2002  
Advance Information  
ꢀꢁꢂꢃꢄꢄꢅꢆꢇꢈꢉꢅꢊꢀ  
&
TM  
ꢄꢘꢄꢙꢑꢅꢆꢑꢚꢑꢅꢊꢑꢁꢛꢀꢆꢑꢜꢌꢖꢝꢑꢇꢈꢉ  
Features  
• Organization: 1,048,576 words × 18 bits  
• NTD architecture for efficient bus operation  
Available in 100-pin TQFP and 165-ball BGA package  
Byte write enables  
™1  
Fast clock speeds to 250 MHz in LVTTL/ LVCMOS  
Fast clock to data access: 2.6/ 3/ 3.4/ 4 ns  
Fast OEaccess time: 2.6/ 3/ 3.4/ 4 ns  
Fully synchronous operation  
Clock enable for operation hold  
• Multiple chip enables for easy expansion  
• 3.3V core power supply  
• 2.5V or 3.3V I/ O operation with separate V  
DDQ  
• “Flow-through” or “pipelined” mode  
Asynchronous output enable control  
Self-timed write cycles  
• Interleaved or linear burst modes  
Snooze mode for standby operation  
TM  
1. NTD is a trademark of Alliance Semiconductor Corporation.  
Logic block diagram  
ꢖꢗ  
ꢖꢗ  
ꢀꢑꢙꢚꢛꢗꢕ  
ꢀꢁꢁꢂꢃꢄꢄ  
ꢂꢃꢊꢋꢄꢌꢃꢂ  
ꢔꢎꢂꢄꢌꢐ ꢝꢊꢋ!  
ꢇꢈꢉ  
ꢇꢘꢗ  
ꢇꢘꢙ  
)ꢂꢋꢌꢃꢐꢁꢃ ꢒ'  
ꢒꢁꢁꢂ.ꢐꢂꢃꢊꢋꢄꢌꢃꢂꢄ  
ꢇꢈꢉ  
ꢖꢗ  
ꢇꢘꢖ  
&()  
*)ꢒ  
*)ꢔ  
ꢇꢝꢞꢌꢂꢝ  
 ꢝꢊꢋ!  
ꢇꢈꢉ  
ꢀꢅ-ꢐ(ꢐꢈꢅ  
+,  
ꢙ#ꢐ$ꢐꢙ"  
%&ꢀ#  
ꢒꢂꢂꢒ'  
ꢈ*ꢍ  
//  
ꢇꢈꢉ  
ꢙ"  
ꢙ"  
ꢅꢆꢐꢑꢒꢓꢔꢕ  
ꢀꢁꢂꢁ  
ꢃꢄꢅꢆꢂ  
ꢇꢈꢉꢃꢊꢂꢈꢇ  
ꢙ"  
ꢙ"  
ꢇꢈꢉ  
ꢙ"  
ꢇꢈꢉ  
ꢇꢘꢜ  
ꢇꢈꢉ  
ꢍꢎꢌꢏꢎꢌ  
ꢂꢃꢊꢋꢄꢌꢃꢂ  
ꢍꢘ  
ꢙ"  
ꢍꢘ  
ꢅꢆꢐꢑꢒꢓꢔꢕ  
Selection guide  
-250  
4
-200  
5
-166  
-100  
10  
Units  
ns  
Minimum cycle time  
6
Maximum pipelined clock frequency  
Maximum pipelined clock access time  
Maximum operating current  
250  
2.6  
400  
160  
30  
200  
3.0  
400  
160  
30  
166  
3.4  
350  
120  
30  
100  
4.0  
230  
70  
MHz  
ns  
mA  
mA  
mA  
Maximum standby current  
Maximum CMOS standby current (DC)  
30  
ꢉꢗꢘꢙꢙꢘꢚꢙꢛꢉꢖꢔꢚꢔꢜꢔꢗꢊꢒꢖꢌꢍꢎꢏꢝꢍ ꢁ  
ꢀꢋꢋꢌꢍꢎꢏꢐꢑꢁꢐꢒꢌꢏꢓꢎꢔꢕꢏꢖꢓꢗ  
!ꢔꢉ"ꢉꢁ ꢉ"ꢜ  
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢉ'ꢉꢊꢋꢋꢅꢌꢍꢎꢏꢉꢐꢏꢑꢅꢎꢁꢍꢒꢓꢎꢈꢁꢄꢔꢉꢊꢋꢋꢉꢄꢅꢆꢇꢈꢕꢉꢄꢏꢕꢏꢄꢖꢏꢒꢔ  

与AS7C331MNTD18A-100TQC相关器件

型号 品牌 获取价格 描述 数据表
AS7C331MNTD18A-100TQI ISSI

获取价格

ZBT SRAM, 1MX18, 8.5ns, CMOS, PQFP100, TQFP-100
AS7C331MNTD18A-133BIN ALSC

获取价格

ZBT SRAM, 1MX18, 10ns, CMOS, PBGA165, LEAD FREE, BGA-165
AS7C331MNTD18A-133TQC ALSC

获取价格

3.3V 1M x 18 Pipelined SRAM with NTD
AS7C331MNTD18A-133TQCN ALSC

获取价格

3.3V 1M x 18 Pipelined SRAM with NTD
AS7C331MNTD18A-133TQI ALSC

获取价格

3.3V 1M x 18 Pipelined SRAM with NTD
AS7C331MNTD18A-133TQIN ALSC

获取价格

3.3V 1M x 18 Pipelined SRAM with NTD
AS7C331MNTD18A-166BIN ALSC

获取价格

ZBT SRAM, 1MX18, 8.5ns, CMOS, PBGA165, LEAD FREE, BGA-165
AS7C331MNTD18A-166TQC ALSC

获取价格

3.3V 1M x 18 Pipelined SRAM with NTD
AS7C331MNTD18A-166TQCN ALSC

获取价格

3.3V 1M x 18 Pipelined SRAM with NTD
AS7C331MNTD18A-166TQI ALSC

获取价格

3.3V 1M x 18 Pipelined SRAM with NTD