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AS7C331MNTD18A-225TQI PDF预览

AS7C331MNTD18A-225TQI

更新时间: 2024-11-03 03:20:31
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器
页数 文件大小 规格书
19页 371K
描述
ZBT SRAM, 1MX18, 6.9ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

AS7C331MNTD18A-225TQI 数据手册

 浏览型号AS7C331MNTD18A-225TQI的Datasheet PDF文件第2页浏览型号AS7C331MNTD18A-225TQI的Datasheet PDF文件第3页浏览型号AS7C331MNTD18A-225TQI的Datasheet PDF文件第4页浏览型号AS7C331MNTD18A-225TQI的Datasheet PDF文件第5页浏览型号AS7C331MNTD18A-225TQI的Datasheet PDF文件第6页浏览型号AS7C331MNTD18A-225TQI的Datasheet PDF文件第7页 
December 2002  
Advance Information  
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&
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Features  
• Organization: 1,048,576 words × 18 bits  
• NTD architecture for efficient bus operation  
Available in 100-pin TQFP and 165-ball BGA package  
Byte write enables  
™1  
Fast clock speeds to 250 MHz in LVTTL/ LVCMOS  
Fast clock to data access: 2.6/ 2.8/ 3/ 3.4 ns  
Fast OEaccess time: 2.6/ 2.8/ 3/ 3.4 ns  
Fully synchronous operation  
Clock enable for operation hold  
• Multiple chip enables for easy expansion  
• 3.3V core power supply  
• 2.5V or 3.3V I/ O operation with separate V  
DDQ  
Flow-through or pipelined mode  
Self-timed write cycles  
Asynchronous output enable control  
• Interleaved or linear burst modes  
Snooze mode for standby operation  
TM  
1. NTD is a trademark of Alliance Semiconductor Corporation.  
Logic block diagram  
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Selection guide  
-250  
4
-225  
4.4  
-200  
-166  
6
Units  
ns  
Minimum cycle time  
5
Maximum pipelined clock frequency  
Maximum pipelined clock access time  
Maximum operating current  
250  
2.6  
425  
110  
70  
225  
2.8  
200  
3.0  
370  
110  
70  
166  
3.4  
340  
90  
MHz  
ns  
400  
110  
70  
mA  
mA  
mA  
Maximum standby current  
Maximum CMOS standby current (DC)  
70  
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